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IXGK50N60BD1

High-current IGBT Transistors with Low Rds

Inventory:9,116

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Overview of IXGK50N60BD1

The IXGK50N60BD1 is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for various industrial and power electronic applications. It features a high current rating and voltage capability, making it suitable for high-power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: Emitter terminal
  • Gate: Gate terminal
  • Collector: Collector terminal
  • Collector: Collector terminal
  • Emitter: Emitter terminal
  • GND: Ground connection
  • VCE: Collector-Emitter voltage supply
  • VGE: Gate-Emitter voltage supply
  • VCC: Positive power supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXGK50N60BD1 IGBT for a visual representation.

Key Features

  • High Current Rating: The IXGK50N60BD1 offers a high current handling capability, suitable for power applications requiring large currents.
  • High Voltage Capability: With its high voltage rating, this IGBT can withstand high voltage levels in industrial systems.
  • Low Saturation Voltage: The device exhibits low saturation voltage, minimizing power dissipation and increasing efficiency.
  • Fast Switching Speed: The IXGK50N60BD1 provides fast switching characteristics, essential for applications requiring rapid on-off transitions.
  • Temperature Stability: Designed for temperature stability, ensuring reliable performance across a range of operating conditions.

Note: For detailed technical specifications, please refer to the IXGK50N60BD1 datasheet.

Application

  • Motor Drives: Ideal for use in motor drive applications where high power switching is required.
  • Power Supplies: Suitable for power supply units and inverters due to its high current and voltage capabilities.
  • Renewable Energy Systems: Used in renewable energy systems such as solar inverters and wind power converters.

Functionality

The IXGK50N60BD1 IGBT is a high-performance semiconductor device that offers high current and voltage handling capabilities. It is indispensable in applications requiring efficient power switching and amplification.

Usage Guide

  • Power Connections: Connect the collector, emitter, and gate terminals to their respective power sources as per the application requirements.
  • Gate Control: Apply the appropriate gate-emitter voltage to control the switching operation of the IGBT.
  • Heat Management: Ensure proper heat sinking and thermal management to maintain the device within its temperature limits during operation.

Frequently Asked Questions

Q: Can the IXGK50N60BD1 be used in high-frequency switching applications?
A: Yes, the IXGK50N60BD1 is capable of high-speed switching suitable for various power electronic applications.

Equivalent

For similar functionalities, consider these alternatives to the IXGK50N60BD1:

  • IXGH50N60BD1: A similar high-power IGBT with comparable performance characteristics.
  • FGB40N60SFD: This IGBT from Fairchild Semiconductor offers similar high-power capabilities for industrial applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-264AA-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series IXGK50N60 Brand IXYS
Continuous Collector Current Ic Max 75 A Height 26.16 mm
Length 19.96 mm Product Type IGBT Transistors
Factory Pack Quantity 25 Subcategory IGBTs
Width 5.13 mm Unit Weight 0.352740 oz

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IXGK50N60BD1

High-current IGBT Transistors with Low Rds

Inventory:

9,116