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IXGH50N60B

This IGBT chip offers reliable performance and is suitable for a variety of industrial and automotive applications

Inventory:9,490

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Overview of IXGH50N60B

The IXGH50N60B is a high power IGBT (Insulated Gate Bipolar Transistor) designed for various power electronic applications. It features a high current capability, low saturation voltage, and robust construction, making it suitable for demanding industrial and automotive systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C-E: Collector-Emitter connection
  • G-E: Gate-Emitter connection
  • E: Emitter terminal
  • VCE: Collector-Emitter voltage
  • IC: Collector current
  • VGE: Gate-Emitter voltage
  • PGND: Power Ground
  • CGND: Control Ground
  • VCC: Positive power supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXGH50N60B IGBT for a visual representation.

Key Features

  • High Current Capability: The IXGH50N60B is capable of handling high collector currents, making it suitable for power applications.
  • Low Saturation Voltage: Features a low saturation voltage, minimizing power dissipation and enhancing efficiency.
  • Robust Construction: Designed for rugged environments, the IXGH50N60B offers excellent durability and reliability.
  • High Input Impedance: The IGBT has a high input impedance, enabling easy interfacing with control circuits.
  • Fast Switching Speed: It provides fast turn-on and turn-off times, essential for high-frequency switching applications.

Note: For detailed technical specifications, please refer to the IXGH50N60B datasheet.

Application

  • Industrial Power Systems: Ideal for use in industrial power systems, including motor drives, inverters, and welding equipment.
  • Renewable Energy: Suitable for power conversion in renewable energy systems such as solar inverters and wind turbines.
  • Automotive Electronics: Used in automotive electronic systems for applications like electric vehicle powertrains and battery management.

Functionality

The IXGH50N60B IGBT offers high current handling capability and low saturation voltage, enabling efficient power control in various industrial and automotive applications.

Usage Guide

  • Power Supply: Connect VCC (Pin) to the positive power supply and PGND (Pin) to the power ground.
  • Control Interface: Apply appropriate gate-emitter voltage (VGE) for turning the IGBT on and off as per the system requirements.
  • Load Connection: Connect the collector-emitter (C-E) terminals in series with the load for power control.

Frequently Asked Questions

Q: Is the IXGH50N60B suitable for high-frequency switching applications?
A: Yes, the IXGH50N60B offers fast switching speed, making it suitable for high-frequency power switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IXGH50N60B:

  • IXGH40N60B: Another high power IGBT from IXYS Corporation offering similar performance and characteristics.
  • IRGP50B60PD1: This is a high power IGBT from Infineon Technologies, providing comparable specifications and performance to the IXGH50N60B.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247AD-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series IXGH50N60 Brand IXYS
Continuous Collector Current Ic Max 75 A Height 21.46 mm
Length 16.26 mm Product Type IGBT Transistors
Factory Pack Quantity 30 Subcategory IGBTs
Width 5.3 mm Unit Weight 0.229281 oz

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IXGH50N60B

This IGBT chip offers reliable performance and is suitable for a variety of industrial and automotive applications

Inventory:

9,490