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IXGH40N120C3D1

Transistor with IGBT technology, 1.2kV voltage rating, 40A current rating, and 380W power handling capacity in a TO247-3 package

Inventory:8,871

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Overview of IXGH40N120C3D1

The IXGH40N120C3D1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronic applications. It features a high current rating, low saturation voltage, and rugged construction, making it suitable for demanding switching and power conversion tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: Emitter terminal connected to the emitter of the IGBT.
  • Collector: Collector terminal connected to the collector of the IGBT.
  • Gate: Gate terminal for applying the control signal to the IGBT.
  • VCE: Collector-Emitter Voltage terminal.
  • VGE: Gate-Emitter Voltage terminal.
  • GND: Ground terminal.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXGH40N120C3D1 IGBT for a visual representation.

Key Features

  • High Current Rating: The IXGH40N120C3D1 offers a high current-carrying capability, making it suitable for high-power applications.
  • Low Saturation Voltage: With its low VCE(sat), this IGBT minimizes power loss during switching operations, leading to higher efficiency.
  • Rugged Construction: The rugged design of the IXGH40N120C3D1 allows for reliable performance in harsh operating conditions.
  • Fast Switching Speed: It features fast switching characteristics, enabling quick response in power electronic circuits.
  • Low Conduction Losses: The low VCE drop results in minimal conduction losses, optimizing energy efficiency.

Note: For detailed technical specifications, please refer to the IXGH40N120C3D1 datasheet.

Application

  • Motor Drives: Ideal for use in motor drive circuits for controlling and driving electric motors.
  • Power Inverters: Suitable for power inverter applications in renewable energy systems and industrial equipment.
  • Switching Power Supplies: Used in switching power supply designs for efficient power conversion.

Functionality

The IXGH40N120C3D1 is an IGBT designed for high-power switching applications. It provides efficient and reliable control of high currents in various power electronic systems.

Usage Guide

  • Gate Control: Apply an appropriate gate voltage with respect to the emitter voltage to control the switching behavior.
  • Load Connection: Connect the collector and emitter terminals in series with the load to be switched or controlled.
  • Protective Features: Implement proper snubber circuits and overcurrent protection for reliable and safe operation.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage rating of the IXGH40N120C3D1?
A: The IXGH40N120C3D1 is rated for a maximum collector-emitter voltage of 1200V, ensuring suitability for high-voltage applications.

Q: Can the IXGH40N120C3D1 be used in high-frequency switching applications?
A: Yes, the IXGH40N120C3D1's fast switching speed makes it suitable for high-frequency switching applications in power electronics.

Equivalent

For similar functionality, consider these alternatives to the IXGH40N120C3D1:

  • IXGH40N60C2D1: Another high-performance IGBT from IXYS Corporation with similar characteristics and compatible pin configuration.
  • FGL40N120AND: This IGBT from Fairchild Semiconductor offers comparable performance and is suitable for similar power electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active VCES - Collector-Emitter Voltage (V) 1200
Collector Current @ 25 ℃ (A) 75 VCE(sat) - Collector-Emitter Saturation Voltage (V) 4.4
Fall Time [Inductive Load] (ns) 57 Configuration Copack (FRED)
Package Type TO-247U Thermal resistance [junction-case] [IGBT] (K/W) 0.33
Turn-off Energy @ 125 ℃ (mJ) 1.6 Collector Current @ 110 ℃ (A) 40
Thermal resistance [junction-case] [Diode] (K/W) 0.9 Forward Current @ 110 ℃ (A) 25

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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IXGH40N120C3D1

Transistor with IGBT technology, 1.2kV voltage rating, 40A current rating, and 380W power handling capacity in a TO247-3 package

Inventory:

8,871