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IXGH24N60B

Model IXGH24N60B, a HIPERFAST IGBT Transistor rated at 600V and 48A

Inventory:5,272

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Overview of IXGH24N60B

The IXGH24N60B is a high voltage IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connects to the high voltage power supply
  • Emitter (E): Output terminal
  • GATE (G): Input for controlling the switching of the IGBT
  • Collector (C): Connects to the high voltage power supply
  • Emitter (E): Output terminal
  • GATE (G): Input for controlling the switching of the IGBT

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXGH24N60B for a visual representation.

Key Features

  • High Voltage Capability: The IXGH24N60B is capable of handling high voltage levels, making it suitable for high power applications.
  • Low Saturation Voltage: Provides efficient switching with low voltage drop during operation.
  • Fast Switching Speed: Offers fast turn-on and turn-off times for rapid switching applications.
  • High Current Capability: Capable of carrying high currents for power handling requirements.
  • Robust Construction: Designed for reliable operation in demanding environments.

Note: For detailed technical specifications, please refer to the IXGH24N60B datasheet.

Application

  • Switch Mode Power Supplies: Ideal for use in high voltage switching power supply designs.
  • Motor Drives: Suitable for controlling high power electric motors in industrial and automotive applications.
  • Inductive Heating: Used in induction heating systems for efficient power control.

Functionality

The IXGH24N60B is a high voltage IGBT designed for efficient and reliable power switching applications. It offers fast switching and high current handling capabilities.

Usage Guide

  • GATE Control: Apply proper voltage levels to the GATE terminal to control the switching behavior of the IGBT.
  • High Voltage Connection: Connect the high voltage power supply to the Collector terminal (C).
  • Load Connection: The Emitter terminal (E) is connected to the load for power output.

Frequently Asked Questions

Q: What is the maximum voltage and current rating of the IXGH24N60B?
A: The IXGH24N60B can handle high voltages up to 600V and currents up to 24A.

Q: Is the IXGH24N60B suitable for automotive applications?
A: Yes, the IXGH24N60B is commonly used in automotive power control and motor drive applications due to its high voltage and current handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IXGH24N60B:

  • IRG4PH40UD: A high voltage IGBT offering similar power handling and switching characteristics.
  • FGL40N120AND: This IGBT provides comparable high voltage and current capabilities for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247AD-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series IXGH24N60 Brand IXYS
Continuous Collector Current Ic Max 48 A Height 21.46 mm
Length 16.26 mm Product Type IGBT Transistors
Factory Pack Quantity 30 Subcategory IGBTs
Width 5.3 mm Unit Weight 0.229281 oz

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IXGH24N60B

Model IXGH24N60B, a HIPERFAST IGBT Transistor rated at 600V and 48A

Inventory:

5,272