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IXGA20N120A3

PAK Transistor Chip

Inventory:5,004

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Overview of IXGA20N120A3

The IXGA20N120A3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for power electronic applications. With a high current and voltage rating, this IGBT is suitable for various power conversion and control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connect to the positive supply voltage for power switching
  • Emitter (E): Output terminal for the power switching application
  • G: Gate terminal for controlling the switching operation
  • Collector (C): Connect to the positive supply voltage for power switching
  • Emitter (E): Output terminal for the power switching application
  • G: Gate terminal for controlling the switching operation

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXGA20N120A3 IGBT for a visual representation.

Key Features

  • High Current and Voltage Rating: The IXGA20N120A3 can handle high power levels with its robust current and voltage specifications.
  • Low Saturation Voltage: The IGBT exhibits low voltage drop during conduction, minimizing power loss.
  • Fast Switching Speed: With its high switching frequency, this IGBT provides efficient power control in various applications.
  • High Input Impedance: The gate input presents a high impedance, allowing for easy and efficient gate control.
  • Temperature Stability: The device is designed for reliable performance across a wide temperature range.

Note: For detailed technical specifications, please refer to the IXGA20N120A3 datasheet.

Application

  • Power Inverters: Ideal for use in power inverter systems for converting DC power to AC power.
  • Motor Drives: Suitable for motor drive applications requiring efficient power switching and control.
  • Renewable Energy Systems: Used in various renewable energy systems such as solar inverters and wind power converters.

Functionality

The IXGA20N120A3 is a high-performance IGBT designed to handle high power levels and provide efficient power control in a variety of applications requiring power switching and conversion.

Usage Guide

  • Power Connections: Connect the collector and emitter terminals to the power supply and load, respectively.
  • Gate Control: Apply appropriate gate drive voltage to control the switching operation of the IGBT.
  • Heat Management: Ensure proper thermal management to maintain the device within the specified temperature limits for reliable operation.

Frequently Asked Questions

Q: Can the IXGA20N120A3 be used in high-frequency switching applications?
A: Yes, the IXGA20N120A3 is designed for fast switching and is suitable for high-frequency power control applications.

Equivalent

For similar functionalities, consider these alternatives to the IXGA20N120A3:

  • IXGA30N60C2: This IGBT offers comparable performance with slight variations in current and voltage ratings.
  • IRG4BC20KD: An alternative IGBT with similar characteristics and suitable for power electronic applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active VCES - Collector-Emitter Voltage (V) 1200
Collector Current @ 25 ℃ (A) 40 VCE(sat) - Collector-Emitter Saturation Voltage (V) 2.5
Fall Time [Inductive Load] (ns) 715 Configuration Single
Package Type TO-263 Thermal resistance [junction-case] [IGBT] (K/W) 0.69
Turn-off Energy @ 125 ℃ (mJ) 10.1 Collector Current @ 110 ℃ (A) 20

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