IXFX26N90

Overview of IXFX26N90

The IXYS IXFX26N90 is a high-performance FET transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The IXFX26N90 pinout refers to the configuration and function of each pin in its PLUS 247-3 package type. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IXFX26N90 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• High Current Handling Capability: The IXFX26N90 can handle high currents up to 26 amps, making it suitable for demanding applications.
• Low RDS(on): This FET transistor features a low drain-source on-resistance of 0.3 ohms, reducing power losses and increasing efficiency.
• HDMOS process: The IXFX26N90 uses an advanced HDMOS (High-Voltage DMOS) process to ensure high reliability and performance in harsh environments.
• Avalanche Rated: This FET transistor is designed with avalanche-rated construction, allowing it to withstand high-energy pulses without damage.
• Low Package Inductance: The PLUS 247-3 package has a low inductance design, minimizing electromagnetic interference (EMI) and radio-frequency interference (RFI).
• Fast Intrinsic Diode: The IXFX26N90 features a fast intrinsic diode that provides excellent body-diode characteristics for efficient switching.

Applications

• Streamlined power control: The IXFX26N90 is suitable for applications requiring high-speed and low-voltage operations, such as in modern power management systems.
• Versatile applications: This FET transistor can be used in a wide range of applications, including analog and digital signal switching, motor control, and power supplies.
• Effortless integration: The IXFX26N90 is designed for easy integration into existing systems, minimizing design complexity and reducing development time.

Advantages and Disadvantages

Advantages

• High current handling capability: The IXFX26N90 can handle high currents up to 26 amps, making it suitable for demanding applications.
• Low RDS(on): This FET transistor features a low drain-source on-resistance of 0.3 ohms, reducing power losses and increasing efficiency.

Disadvantages

• Sensitivity to temperature: The IXFX26N90 may be sensitive to temperature fluctuations, which can affect its performance and reliability.

Equivalents

For similar functionalities, consider these alternatives to the IXFX26N90:

• Fairchild Semiconductor FET transistor: The Fairchild Semiconductor FET transistor offers similar high-performance capabilities and is suitable for demanding applications.
• International Rectifier FET transistor: The International Rectifier FET transistor provides a range of high-performance FET transistors with similar characteristics to the IXFX26N90.