IXFN26N90

The IXFN26N90 is an N-channel enhancement-mode power MOSFET designed for high-power switching applications. This MOSFET features a low on-state resistance and high current capability, making it suitable for power supply, motor control, and inverter applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• G: Gate
• D: Drain
• S: Source
• B: Body Diode
• V: Kelvin Source
• G: Gate
• D: Drain
• S: Source
• B: Body Diode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFN26N90 MOSFET for a visual representation.

Key Features

• Enhancement-Mode MOSFET: The IXFN26N90 is designed as an enhancement-mode MOSFET for convenient switching control.
• Low On-State Resistance: This MOSFET offers low on-state resistance for efficient power handling and reduced heat dissipation.
• High Current Capability: With its high current rating, the IXFN26N90 is capable of handling large amounts of current in applications.
• Fast Switching Speed: The MOSFET provides fast switching speeds, allowing for rapid on/off transitions in high-frequency applications.
• High Power Dissipation: The IXFN26N90 is capable of dissipating significant power, making it suitable for high-power applications.

Note: For detailed technical specifications, please refer to the IXFN26N90 datasheet.

Application

• Power Supply Units: Ideal for use in power supply units where high current handling and efficiency are required.
• Motor Control: Suitable for motor control applications in industrial and automotive systems.
• Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The IXFN26N90 is a high-power N-channel MOSFET that enables efficient switching and control in various power electronics applications. It provides reliable performance and high current handling capabilities for demanding tasks.

Usage Guide

• Gate Control: Apply the appropriate voltage to the Gate (G) pin to control the switching behavior of the MOSFET.
• Load Connection: Connect the load between the Drain (D) and Source (S) pins for power switching operations.
• Heat Dissipation: Ensure proper heat sinking and thermal management to handle the power dissipation of the MOSFET.

Frequently Asked Questions

Q: Can the IXFN26N90 be used in high-frequency applications?
A: Yes, the fast switching speed of the IXFN26N90 makes it suitable for high-frequency applications requiring rapid switching.