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IXFK55N50

IXFK55N50 is a power FET capable of handling currents up to 55A and voltages of 500V, with a low on-resistance of 0

Inventory:6,255

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Overview of IXFK55N50

The IXFK55N50 is a high-power MOSFET transistor designed for use in power electronics applications. This MOSFET features a high voltage rating and low on-resistance, making it ideal for high-power switching circuits and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate Terminal
  • D: Drain Terminal
  • S: Source Terminal
  • P: Power Supply Connection
  • GND: Ground Connection
  • S: Source Terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXFK55N50 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: The IXFK55N50 can withstand high voltages, making it suitable for high-power applications.
  • Low On-Resistance: This MOSFET has low on-resistance, resulting in minimal power loss and efficient operation.
  • Fast Switching Speed: With its high-performance design, the IXFK55N50 offers fast switching speeds for quick response in switching circuits.
  • High Power Dissipation: The MOSFET can handle high power dissipation, ensuring reliable operation in demanding environments.
  • Protection Features: Includes built-in protection features against overcurrent and overvoltage conditions for enhanced safety.

Note: For detailed technical specifications, please refer to the IXFK55N50 datasheet.

Application

  • Power Electronics: Ideal for power electronics applications such as motor control, power supplies, and inverters.
  • Switching Circuits: Suitable for use in high-power switching circuits for efficient power management.
  • Industrial Automation: Used in industrial automation systems for controlling high-power loads.

Functionality

The IXFK55N50 MOSFET is a high-power transistor that allows for efficient switching of high currents in power electronics applications. It provides reliable performance and high power handling capability.

Usage Guide

  • Gate Control: Apply the appropriate voltage signal to the Gate terminal for controlling the switching operation.
  • Power Connection: Connect the Power Supply (P) and Ground (GND) terminals to the respective power source and ground connections.
  • Load Connection: Connect the load to the Drain (D) and Source (S) terminals of the MOSFET for power switching applications.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFK55N50?
A: The IXFK55N50 has a maximum voltage rating of 500V, suitable for high-power applications requiring high voltage handling capability.

Q: Can the IXFK55N50 be used in motor control applications?
A: Yes, the IXFK55N50 is designed for motor control applications due to its high power handling and low on-resistance characteristics.

Equivalent

For similar functionalities, consider these alternatives to the IXFK55N50:

  • FDP8870: A high-power MOSFET with similar voltage and current ratings for power electronics applications.
  • IRF1405: This MOSFET offers comparable performance and power handling capabilities in high-power circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 500 Maximum On-Resistance @ 25 ℃ (Ohm) 0.1
Continuous Drain Current @ 25 ℃ (A) 50 Gate Charge (nC) 330
Input Capacitance, CISS (pF) 9400 Thermal resistance [junction-case] (K/W) 0.22
Configuration Single Package Type TO-264
Power Dissipation (W) 568 Maximum Reverse Recovery (ns) 250
Sample Request No

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IXFK55N50

IXFK55N50 is a power FET capable of handling currents up to 55A and voltages of 500V, with a low on-resistance of 0

Inventory:

6,255