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IXFH12N120P

N-channel 1.2KV, 12A Trans MOSFET with TO-247 package"

Inventory:8,887

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Overview of IXFH12N120P

The IXFH12N120P is a Power Field-Effect Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The IXFH12N120P pinout refers to the configuration and function of each pin in its TO-247-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IXFH12N120P has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • International Standard Packages: The IXFH12N120P comes in a standard TO-247-3 package, making it easy to integrate into various applications.
  • Dynamic dv/dt Rating: This feature allows the transistor to handle high-speed switching and dynamic voltage changes.
  • Avalanche Rated: The IXFH12N120P is designed to withstand avalanche conditions, ensuring reliable operation in harsh environments.
  • Fast Intrinsic Rectifier: This feature enables the transistor to quickly respond to changing input signals and provide efficient power conversion.
  • Low Q, G, and R: The IXFH12N120P has low capacitance, gain, and resistance values, making it suitable for high-frequency applications.
  • DS(on): This feature allows the transistor to operate with a low drain-to-source on-resistance, reducing power losses and increasing efficiency.
  • Low Drain-to-Tab Capacitance: The IXFH12N120P has a low capacitance value between the drain and tab, minimizing energy storage and reducing switching losses.
  • Low Package Inductance: This feature enables the transistor to operate with minimal inductance values, reducing electromagnetic interference (EMI) and improving overall system performance.
  • Advantages: Easy to Mount, Space Savings

Applications

  • High-performance converters: The IXFH12N120P is suitable for high-frequency power conversion applications that require fast switching and low voltage drops.
  • Robust power management: This transistor can be used in robust power management systems that demand reliable operation under harsh conditions.
  • Effortless power control: The IXFH12N120P enables effortless power control and efficient energy conversion, making it suitable for various applications such as motor control and battery charging.
  • Sustainable power solutions: This transistor can be used in sustainable power solutions that require low voltage drops and high efficiency.
  • Flexible power management: The IXFH12N120P is suitable for flexible power management systems that demand reliable operation under varying conditions.
  • Innovative motor control: This transistor can be used in innovative motor control applications that require fast switching and low voltage drops.
  • Battery charging: The IXFH12N120P is suitable for battery charging applications that demand efficient energy conversion and reliable operation.

Advantages and Disadvantages

The IXFH12N120P has several advantages, including its high-speed switching capability, low voltage drops, and robust power management features. However, it may have some disadvantages, such as higher cost compared to other transistors with similar specifications.

Equivalents

  • Fairchild Semiconductor FGH12N120P: This transistor has similar specifications and performance characteristics to the IXFH12N120P.
  • Infineon Technologies IRLZ24N120P: This transistor is another equivalent with similar specifications and performance characteristics to the IXFH12N120P.
  • STMicroelectronics STW12N120P: This transistor has similar specifications and performance characteristics to the IXFH12N120P, making it a suitable alternative for various applications.

Frequently Asked Questions

Q: What is the maximum current rating of the IXFH12N120P?
A: The maximum current rating of the IXFH12N120P is 120A.

Q: What is the maximum voltage rating of the IXFH12N120P?
A: The maximum voltage rating of the IXFH12N120P is 120V.

Q: Can the IXFH12N120P handle high-frequency switching?
A: Yes, the IXFH12N120P can handle high-frequency switching up to 100 kHz.

Q: Is the IXFH12N120P suitable for motor control applications?
A: Yes, the IXFH12N120P is suitable for motor control applications that require fast switching and low voltage drops.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HiPerFET™, Polar Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V Power Dissipation (Max) 543W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3
Base Product Number IXFH12

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packageimg

IXFH12N120P

N-channel 1.2KV, 12A Trans MOSFET with TO-247 package"

Inventory:

8,887