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IXFH110N10P

MOSFET 110 Amps 100V 0.015 Rds

Quantity Unit Price(USD) Ext. Price
1000 $1.732 $1,732.00
500 $1.764 $882.00
200 $1.828 $365.60
1 $4.724 $4.72

Inventory:5,864

*The price is for reference only.
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Overview of IXFH110N10P

The IXFH110N10P is a N-Channel 100 V 110A (Tc) 480W (Tc) Through Hole TO-247AD MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.

Pinout

The IXFH110N10P pinout refers to the configuration and function of each pin in its TO-247AD package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IXFH110N10P has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Compact Design: The IXFH110N10P features a compact design that makes it ideal for use in space-constrained applications.
  • Fast Switching Time: This MOSFET has a fast switching time, which enables it to handle high-frequency signals with ease.
  • Low Conduction Loss: The IXFH110N10P has low conduction loss, making it suitable for applications where power consumption is a concern.
  • High Current Handling: This MOSFET can handle high currents, making it ideal for use in applications that require high current flow.
  • Robust Construction: The IXFH110N10P has a robust construction that ensures reliable operation even in harsh environments.

Applications

  • Switch-Mode and Resonant-Mode Power Supplies: The IXFH110N10P is suitable for use in switch-mode and resonant-mode power supplies due to its high current handling and fast switching time.
  • DC-DC Converters: This MOSFET can be used in DC-DC converters that require high current flow and low conduction loss.
  • Battery Chargers: The IXFH110N10P is suitable for use in battery chargers that require high current handling and fast switching time.
  • Uninterrupted Power Supplies: This MOSFET can be used in uninterrupted power supplies (UPS) that require high current handling and low conduction loss.
  • AC Motor Drives: The IXFH110N10P is suitable for use in AC motor drives that require high current handling and fast switching time.

Equivalents

For similar functionalities, consider these alternatives to the IXFH110N10P:

  • Fairchild Semiconductor FQP50N10L: This MOSFET has a similar voltage and current rating as the IXFH110N10P and is suitable for use in power supplies and motor drives.
  • Infineon Technologies IRF540N: This MOSFET has a similar voltage and current rating as the IXFH110N10P and is suitable for use in power supplies, motor drives, and DC-DC converters.
  • STMicroelectronics STW45NF50L: This MOSFET has a similar voltage and current rating as the IXFH110N10P and is suitable for use in power supplies, motor drives, and DC-DC converters.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXFH110N10P?
A: The maximum voltage rating of the IXFH110N10P is 100V.

Q: What is the maximum current handling capacity of the IXFH110N10P?
A: The maximum current handling capacity of the IXFH110N10P is 110A (Tc).

Q: Is the IXFH110N10P suitable for use in high-frequency applications?
A: Yes, the IXFH110N10P has a fast switching time and is suitable for use in high-frequency applications.

Q: Can the IXFH110N10P handle high currents and low conduction loss simultaneously?
A: Yes, the IXFH110N10P can handle high currents and low conduction loss simultaneously, making it suitable for use in power supplies and motor drives.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 110 A Drain-source On Resistance-Max 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 250 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON

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IXFH110N10P

MOSFET 110 Amps 100V 0.015 Rds

Inventory:

5,864