IS62WVS2568FBLL-20NLI

The IS62WVS2568FBLL-20NLI is a 256Kx8 high-speed, low-power SRAM (Static Random Access Memory) designed for use in various memory storage and data buffering applications. This SRAM offers a fast access time and low standby current, making it suitable for battery-powered devices and other power-sensitive systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• VCC: Power supply voltage
• GND: Ground
• CE1, CE2: Chip Enable for two independent chip selects
• OE: Output Enable
• WE: Write Enable
• BYTE: Byte Operation/Multi-purpose
• UB, LB: High Order and Low Order Byte Enable
• DATA I/O (I/O0-I/O7): Data Input/Output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS62WVS2568FBLL-20NLI SRAM for a visual representation.

Key Features

• High-Speed Access: Offers fast access time for quick data retrieval and processing.
• Low-Power Operation: Features low standby current, making it suitable for power-sensitive applications.
• Dual Chip Enable Options: Supports two independent chip selects for versatile memory organization.
• Byte Operation: Provides byte-wide data access for efficient data manipulation.
• Wide Voltage Range: Operates within a wide voltage range, enhancing compatibility with various systems.

Note: For detailed technical specifications, please refer to the IS62WVS2568FBLL-20NLI datasheet.

Application

• Embedded Systems: Suitable for use in embedded systems requiring fast and low-power memory solutions.
• Data Buffering: Ideal for data buffering applications in various digital systems.
• Battery-Powered Devices: Well-suited for battery-powered devices and portable equipment.

Functionality

The IS62WVS2568FBLL-20NLI is a high-speed, low-power SRAM designed to provide efficient and reliable data storage and retrieval for a wide range of electronic applications.

Usage Guide

• Power Supply: Connect VCC (Pin 1) to the power supply voltage and GND (Pin 8) to the ground reference.
• Chip Enable: Control the operation of the memory using the CE1 and CE2 pins.
• Read/Write Operations: Use the OE and WE pins for output enable and write enable operations, respectively.

Frequently Asked Questions

Q: Can the IS62WVS2568FBLL-20NLI support battery-powered applications?
A: Yes, the low-power operation of the IS62WVS2568FBLL-20NLI makes it suitable for battery-powered applications requiring high-speed memory.