• IS61WV51216BLL-10MLI BGA-48
IS61WV51216BLL-10MLI BGA-48

IS61WV51216BLL-10MLI

TFBGA-48(9x11) SRAM ROHS

Inventory:9,519

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Overview of IS61WV51216BLL-10MLI

The IS61WV51216BLL-10MLI is a 512K x 16 high-speed, low-power CMOS static RAM (SRAM) designed for various memory-intensive applications. It offers a 10ns access time and operates on a low voltage, making it suitable for battery-powered devices.

Pinout

(Note: The pin configuration provided below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A18: Address Inputs
  • Q1-Q16: Data Outputs
  • WE: Write Enable
  • OE: Output Enable
  • CE: Chip Enable
  • VCC: Power Supply
  • GND: Ground
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS61WV51216BLL-10MLI SRAM for a visual representation.

Key Features

  • High-Speed Operation: Offers a fast 10ns access time for quick data retrieval.
  • Low-Power Consumption: Ideal for energy-efficient applications and battery-powered devices.
  • Wide Operating Voltage Range: Works with a low voltage supply for versatile compatibility.
  • 512K x 16 Configuration: Provides a large memory capacity for data storage purposes.
  • Easy Interface: Simple control inputs for seamless integration into various systems.

Note: For detailed technical specifications, please refer to the IS61WV51216BLL-10MLI datasheet.

Application

  • Embedded Systems: Suitable for use in embedded systems requiring fast and low-power memory storage.
  • Communication Devices: Ideal for buffering and storing data in communication equipment.
  • Industrial Automation: Used in industrial automation systems for data processing and control.

Functionality

The IS61WV51216BLL-10MLI is a high-speed, low-power SRAM that provides reliable data storage and retrieval capabilities for a variety of applications.

Usage Guide

  • Power Supply: Connect VCC and GND pins to the appropriate power sources.
  • Data Interface: Use the address inputs (A0-A18) and control inputs (WE, OE, CE) for data operations.
  • Data Output: Retrieve data from the Q1-Q16 output pins.

Frequently Asked Questions

Q: What is the typical power consumption of the IS61WV51216BLL-10MLI?
A: The IS61WV51216BLL-10MLI features low-power consumption, making it suitable for battery-operated devices with energy efficiency requirements.

Q: Is the IS61WV51216BLL-10MLI compatible with 5V systems?
A: Yes, the IS61WV51216BLL-10MLI can operate with a 5V power supply, providing compatibility with standard logic levels.

Equivalent

For similar memory storage solutions, consider these alternatives to the IS61WV51216BLL-10MLI:

  • IS62WV51216BLL-10TLI: A comparable 512K x 16 SRAM with slightly different specifications or package options.
  • CY62128EV30LL-45ZSXI: This is a low-power SRAM IC from Cypress Semiconductor that offers similar performance characteristics.

IS61WV51216BLL-10MLI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 8 Mbit Organization 512 k x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 2.4 V
Supply Current - Max 95 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Package / Case BGA-48 Brand ISSI
Data Rate SDR Memory Type SDR
Moisture Sensitive Yes Number of Ports 1
Product Type SRAM Series IS61WV51216BLL
Factory Pack Quantity 210 Subcategory Memory & Data Storage
Type Asynchronous Unit Weight 0.006773 oz

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IS61WV51216BLL-10MLI

TFBGA-48(9x11) SRAM ROHS

Inventory:

9,519