• IS61WV204816BLL-10BLI TFBGA-48
IS61WV204816BLL-10BLI TFBGA-48

IS61WV204816BLL-10BLI

Supports Dual Supply Voltages (3.3V/1.8V)

Inventory:8,392

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Overview of IS61WV204816BLL-10BLI

The IS61WV204816BLL-10BLI is a 4M high-speed static RAM (SRAM) organized as 262,144 words by 16 bits. It offers high performance with a maximum access time of 10ns, making it suitable for applications requiring fast read and write operations. This SRAM is designed for high-speed memory storage and data buffering in digital systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A18: Address Inputs
  • DQ0-DQ15: Data Input/Output
  • CE1, CE2: Chip Enable Inputs
  • OE: Output Enable
  • WE: Write Enable
  • Vcc: Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS61WV204816BLL-10BLI SRAM for a visual representation.

Key Features

  • High-Speed Operation: Offers a maximum access time of 10ns, facilitating rapid read and write operations.
  • 4M Density: Provides a storage capacity of 4 Megabits, organized as 262,144 words by 16 bits.
  • Low Power Consumption: Consumes minimal power, suitable for energy-efficient applications.
  • Wide Operating Voltage Range: Supports operation from a single +3.0V to +3.6V power supply.
  • High Reliability: Features static operation for reliable data retention without the need for refresh cycles.

Note: For detailed technical specifications, please refer to the IS61WV204816BLL-10BLI datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems requiring high-speed memory storage.
  • Networking Equipment: Suitable for data buffering and packet processing in networking devices.
  • Industrial Control: Used in industrial control systems for fast data access and processing.

Functionality

The IS61WV204816BLL-10BLI is a high-speed SRAM module designed for rapid data access and storage. It provides reliable and efficient memory operation in various digital applications.

Usage Guide

  • Power Supply: Connect Vcc and GND pins to the appropriate power and ground sources, respectively.
  • Data Interface: Use the address (A0-A18) and data (DQ0-DQ15) lines for reading from and writing to the SRAM.
  • Control Signals: Properly manage the chip enable (CE1, CE2), output enable (OE), and write enable (WE) signals for correct operation.

Frequently Asked Questions

Q: What is the maximum access time of the IS61WV204816BLL-10BLI SRAM?
A: The IS61WV204816BLL-10BLI offers a maximum access time of 10ns, ensuring fast read and write operations.

Q: Can the IS61WV204816BLL-10BLI operate with a 3.3V power supply?
A: Yes, the IS61WV204816BLL-10BLI supports operation from a single +3.0V to +3.6V power supply, including 3.3V.

Equivalent

For similar functionalities, consider these alternatives to the IS61WV204816BLL-10BLI:

  • IS62WV51216BLL-15TLI: A lower density 512K high-speed SRAM offering similar performance characteristics.
  • AS6C1008-55SIN: This 1M fast SRAM provides comparable speed and features to the IS61WV204816BLL-10BLI.

IS61WV204816BLL-10BLI

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category SRAM RoHS Details
Memory Size 32 Mbit Organization 2 M x 16
Access Time 10 ns Interface Type Parallel
Supply Voltage - Max 3.6 V Supply Voltage - Min 2.4 V
Supply Current - Max 90 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Mounting Style SMD/SMT
Brand ISSI Moisture Sensitive Yes
Product Type SRAM Series IS61WV204816BLL
Factory Pack Quantity 480 Subcategory Memory & Data Storage
Unit Weight 0.078051 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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IS61WV204816BLL-10BLI

Supports Dual Supply Voltages (3.3V/1.8V)

Inventory:

8,392