IS61WV204816BLL-10BLI

The IS61WV204816BLL-10BLI is a 4M high-speed static RAM (SRAM) organized as 262,144 words by 16 bits. It offers high performance with a maximum access time of 10ns, making it suitable for applications requiring fast read and write operations. This SRAM is designed for high-speed memory storage and data buffering in digital systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• A0-A18: Address Inputs
• DQ0-DQ15: Data Input/Output
• CE1, CE2: Chip Enable Inputs
• OE: Output Enable
• WE: Write Enable
• Vcc: Power Supply
• GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS61WV204816BLL-10BLI SRAM for a visual representation.

Key Features

• High-Speed Operation: Offers a maximum access time of 10ns, facilitating rapid read and write operations.
• 4M Density: Provides a storage capacity of 4 Megabits, organized as 262,144 words by 16 bits.
• Low Power Consumption: Consumes minimal power, suitable for energy-efficient applications.
• Wide Operating Voltage Range: Supports operation from a single +3.0V to +3.6V power supply.
• High Reliability: Features static operation for reliable data retention without the need for refresh cycles.

Note: For detailed technical specifications, please refer to the IS61WV204816BLL-10BLI datasheet.

Application

• Embedded Systems: Ideal for use in embedded systems requiring high-speed memory storage.
• Networking Equipment: Suitable for data buffering and packet processing in networking devices.
• Industrial Control: Used in industrial control systems for fast data access and processing.

Functionality

The IS61WV204816BLL-10BLI is a high-speed SRAM module designed for rapid data access and storage. It provides reliable and efficient memory operation in various digital applications.

Usage Guide

• Power Supply: Connect Vcc and GND pins to the appropriate power and ground sources, respectively.
• Data Interface: Use the address (A0-A18) and data (DQ0-DQ15) lines for reading from and writing to the SRAM.
• Control Signals: Properly manage the chip enable (CE1, CE2), output enable (OE), and write enable (WE) signals for correct operation.

Frequently Asked Questions

Q: What is the maximum access time of the IS61WV204816BLL-10BLI SRAM?
A: The IS61WV204816BLL-10BLI offers a maximum access time of 10ns, ensuring fast read and write operations.

Q: Can the IS61WV204816BLL-10BLI operate with a 3.3V power supply?
A: Yes, the IS61WV204816BLL-10BLI supports operation from a single +3.0V to +3.6V power supply, including 3.3V.