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IS42S32800J-7TLI

This DRAM chip has a configuration of 8Mx32, meaning it has 8 million cells arranged in 32 columns

Inventory:7,427

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Overview of IS42S32800J-7TLI

The IS42S32800J-7TLI is a 256Mb synchronous DRAM module designed for high-speed and high-density memory applications. It offers a data rate of 143MHz and operates at a voltage of 3.3V. This DRAM module is ideal for use in embedded systems, networking equipment, and other memory-intensive applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply voltage
  • VDDQ: Power supply for input and output buffers
  • CLK: System clock input
  • DQ: Data input/output pins
  • WE: Write enable input
  • CAS: Column address strobe input
  • RAS: Row address strobe input
  • CS: Chip select input
  • CKE: Clock enable input
  • BL: Byte/Latency control input
  • DM: Data mask input/output pins
  • NC: No connection
  • GND: Ground

Circuit Diagram

Include a detailed circuit diagram showcasing the connections and operation of the IS42S32800J-7TLI DRAM module for a better understanding of its functionality.

Key Features

  • High Density: The IS42S32800J-7TLI offers a high memory density of 256Mb, suitable for storing large amounts of data.
  • Fast Data Rate: With a data rate of 143MHz, this DRAM module provides high-speed data transfer for demanding applications.
  • Low Voltage Operation: Operating at 3.3V, the module ensures efficient power consumption while maintaining performance.
  • Synchronous Design: The synchronous operation of the DRAM module allows for synchronized data transfers and system timing.
  • Wide Application Compatibility: Suitable for a variety of applications including networking devices, industrial equipment, and telecommunications systems.

Note: For detailed technical specifications, please refer to the IS42S32800J-7TLI datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems requiring high-speed and high-density memory.
  • Networking Equipment: Suitable for networking devices where fast data transfer and reliable memory storage are essential.
  • Telecommunications: Used in telecommunications systems for efficient data processing and storage.

Functionality

The IS42S32800J-7TLI synchronous DRAM module provides high-speed and high-density memory storage for various applications, ensuring reliable and efficient data handling.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) and VDDQ (Pin 2) to the 3.3V power supply.
  • Data Connections: Utilize the DQ pins for data input and output operations.
  • Clock Management: Input the system clock signal on the CLK pin to synchronize data transfers.

Frequently Asked Questions

Q: What is the maximum operating frequency of the IS42S32800J-7TLI?
A: The IS42S32800J-7TLI operates at a maximum frequency of 143MHz, providing high-speed data access.

Q: Is the IS42S32800J-7TLI compatible with 5V systems?
A: No, the IS42S32800J-7TLI operates at a voltage of 3.3V and may not be directly compatible with 5V systems without appropriate level shifting.

Equivalent

For similar high-speed and high-density memory solutions, consider these alternatives to the IS42S32800J-7TLI:

  • MT48LC16M16A2: A comparable 256Mb synchronous DRAM module from Micron Technology offering similar performance and features.
  • W9864G6KH: This 256Mb SDRAM module from Winbond provides high-speed data access and reliable performance for memory-intensive applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM RoHS Details
Type SDRAM Mounting Style SMD/SMT
Package / Case TSOP-86 Data Bus Width 32 bit
Organization 8 M x 32 Memory Size 256 Mbit
Maximum Clock Frequency 143 MHz Access Time 6.5 ns
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 170 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Series IS42S32800J
Brand ISSI Moisture Sensitive Yes
Product Type DRAM Factory Pack Quantity 108
Subcategory Memory & Data Storage Unit Weight 0.019753 oz

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packageimg

IS42S32800J-7TLI

This DRAM chip has a configuration of 8Mx32, meaning it has 8 million cells arranged in 32 columns

Inventory:

7,427