IS42S32800B-7TL

The IS42S32800B-7TL is a 128Mb high-speed synchronous DRAM (SDRAM) organized as 8M words by 16 bits. It operates at a clock frequency of 143MHz and is designed to provide high-speed performance for various memory applications, including embedded systems, graphics processing, and networking devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• VDD: Power supply voltage
• DQ: Data input/output pins
• ADDR/CMD: Address and command inputs
• CKE: Clock enable
• CS: Chip select for bank 1
• WE: Write enable for bank 1
• CAS: Column address strobe
• RAS: Row address strobe
• DM: Data mask for write data
• BA0-BA1: Bank address inputs
• CLK: Clock input
• NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS42S32800B-7TL SDRAM for a visual representation.

Key Features

• High-Speed Synchronous DRAM: Offers high-speed operation with a clock frequency of 143MHz, catering to performance-critical applications.
• 128Mb Density: Provides a large memory density, suitable for data-intensive tasks in embedded systems and graphics processing.
• Low Power Consumption: Features low power operation, making it suitable for power-sensitive applications.
• Multiplexed Address and Data Inputs: Optimizes the usage of available pins and simplifies system design.
• Bank Architecture: Includes a dual-bank architecture for concurrent operation and improved memory access efficiency.

Note: For detailed technical specifications, please refer to the IS42S32800B-7TL datasheet.

Application

• Embedded Systems: Ideal for use in embedded systems, such as IoT devices and industrial control systems, requiring high-speed memory access.
• Graphics Processing: Suitable for graphics processing units (GPUs) and video processing applications, providing the required memory bandwidth.
• Networking Devices: Used in networking equipment for buffering and caching data in high-speed data transfer environments.

Functionality

The IS42S32800B-7TL is a high-speed synchronous DRAM that provides efficient memory access for a wide range of applications, ensuring fast and reliable data storage and retrieval.

Usage Guide

• Power Supply: Connect VDD (Pin 1) to the power supply voltage as specified in the datasheet.
• Data Connections: Connect the DQ pins for data input and output.
• Address Inputs: Provide the necessary address inputs to access specific memory locations.
• Control Signals: Use the control inputs (CKE, CS, WE, CAS, RAS) for proper memory operation.

Frequently Asked Questions

Q: What is the maximum operating frequency of the IS42S32800B-7TL?
A: The IS42S32800B-7TL operates at a clock frequency of 143MHz, providing high-speed memory access.

Q: Can the IS42S32800B-7TL be used in battery-powered devices?
A: Yes, the low power consumption of the IS42S32800B-7TL makes it suitable for use in battery-powered applications requiring high-speed memory.