• IS42S16800E-7TL TSOP-54
IS42S16800E-7TL TSOP-54

IS42S16800E-7TL

3.3V Memory Module

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Overview of IS42S16800E-7TL

The IS42S16800E-7TL is a high-speed CMOS Synchronous DRAM (SDRAM) IC that offers a capacity of 128Mb organized as 8,388,608 words by 16 bits. It operates with a maximum clock frequency of 143MHz and provides fast access times, making it ideal for use in high-performance computing and networking applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDDQ: Power supply for I/O buffers
  • UDM, LDM: Data mask for upper and lower bytes
  • CLK, /CLK: Clock input and inverted clock input
  • CS: Chip select for device enable
  • WE: Write enable for write operations
  • RAS: Row address strobe for row access
  • CAS: Column address strobe for column access
  • SDQS, /SDQS: Data strobes for reads and writes
  • ADDR: Address input for row and column
  • DQ: Data input/output
  • VDD, VSS: Power and ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS42S16800E-7TL SDRAM IC for a visual representation.

Key Features

  • High-Speed SDRAM: The IS42S16800E-7TL offers fast data access with a maximum clock frequency of 143MHz, suitable for high-performance applications.
  • 128Mb Capacity: With a capacity of 128Mb, this IC provides ample storage for data-intensive tasks.
  • Low Power Consumption: Despite its high speed, the IS42S16800E-7TL features low power consumption, making it energy-efficient.
  • Synchronous Operation: This SDRAM operates synchronously with the system clock for precise data transfer.
  • Wide Operating Temperature Range: The IC can operate across a wide temperature range, ensuring reliability in various environments.

Note: For detailed technical specifications, please refer to the IS42S16800E-7TL datasheet.

Application

  • High-Performance Computing: Suitable for high-speed data processing and storage in computing systems.
  • Networking Equipment: Ideal for use in networking devices for fast data transfer and buffering.
  • Embedded Systems: Commonly used in embedded applications that require high-speed memory access.

Functionality

The IS42S16800E-7TL is a high-speed Synchronous DRAM IC that provides fast and reliable data storage and retrieval capabilities, making it essential for demanding computing and networking tasks.

Usage Guide

  • Power Supply: Connect VDD and VDDQ to the respective power supplies, and VSS to ground for proper power distribution.
  • Data Transfer: Use the appropriate address, control, and data lines to read from and write to the SDRAM IC.
  • Clock Input: Provide the IC with a stable clock signal to ensure synchronous operation.

Frequently Asked Questions

Q: What is the maximum clock frequency supported by the IS42S16800E-7TL?
A: The IS42S16800E-7TL can operate with a maximum clock frequency of 143MHz.

Q: Is the IS42S16800E-7TL suitable for mobile applications?
A: While not specifically designed for mobile applications, the low power consumption of the IS42S16800E-7TL makes it a viable option for certain portable devices requiring high-speed memory.

Equivalent

For similar functionalities, consider these alternatives to the IS42S16800E-7TL:

  • MT47H64M16HR-25E:Hynix SDRAM IC with comparable speed and capacity specifications.
  • W9864G6JT-6:Winbond SDRAM IC offering similar features to the IS42S16800E-7TL for memory-intensive applications.

IS42S16800E-7TL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM RoHS Details
Type SDRAM Mounting Style SMD/SMT
Package / Case TSOP-54 Data Bus Width 16 bit
Organization 8 M x 16 Memory Size 128 Mbit
Maximum Clock Frequency 143 MHz Access Time 5.4 ns
Supply Voltage - Max 3.6 V Supply Voltage - Min 3 V
Supply Current - Max 120 mA Minimum Operating Temperature 0 C
Maximum Operating Temperature + 70 C Series IS42S16800E-7
Brand ISSI Height 1 mm
Length 22.22 mm Moisture Sensitive Yes
Product Type DRAM Factory Pack Quantity 108
Subcategory Memory & Data Storage Width 10.16 mm

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