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IS41C16100C-50TLI

RoHS compliant IT

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Overview of IS41C16100C-50TLI

The IS41C16100C-50TLI is a 1M x 16 Dynamic Random Access Memory (DRAM) IC with a 50ns access time. It is designed to provide high-speed data storage and retrieval capabilities in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power supply voltage
  • VSS: Ground connection
  • A0-A10: Address inputs
  • DQ0-DQ15: Data input/output
  • WE: Write enable
  • RAS: Row address strobe
  • CAS: Column address strobe
  • OE: Output enable
  • NC: No connect

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IS41C16100C-50TLI DRAM IC for a visual representation.

Key Features

  • 1M x 16 DRAM: Offers a storage capacity of 1 megabit with a 16-bit data bus.
  • 50ns Access Time: Provides fast data access for efficient system performance.
  • Low Power Consumption: Consumes minimal power, suitable for energy-efficient devices.
  • Wide Operating Voltage Range: Supports a range of supply voltages for compatibility with different systems.
  • High-Speed Data Storage: Ideal for applications requiring quick and reliable data storage.

Note: For detailed technical specifications, please refer to the IS41C16100C-50TLI datasheet.

Application

  • Embedded Systems: Suitable for use in embedded systems for data buffering and storage.
  • Computer Memory: Used in computer systems for main memory applications.
  • Communication Devices: Ideal for storing data in communication devices such as routers and switches.

Functionality

The IS41C16100C-50TLI DRAM IC is designed to provide high-speed data storage and retrieval capabilities, making it essential for various electronic devices requiring memory functionality.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) and VSS (Pin 2) to the appropriate power sources.
  • Data Interface: Use the address and data pins (A0-A10, DQ0-DQ15) for data input and output operations.
  • Control Signals: Control write, read, and output operations using the WE, RAS, CAS, and OE pins.

Frequently Asked Questions

Q: What is the storage capacity of the IS41C16100C-50TLI?
A: The IC offers a storage capacity of 1 megabit.

Q: Is the IS41C16100C-50TLI suitable for high-performance computing systems?
A: Yes, the IC's 50ns access time makes it suitable for high-speed data processing in computing applications.

Equivalent

For similar functionalities, consider these alternatives to the IS41C16100C-50TLI:

  • MT48LC4M32B2: A 128Mb x 32 SDRAM IC with comparable performance characteristics.
  • K4H511638G: This 256Mb x 16 DDR SDRAM IC offers similar data storage capabilities in a different package.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM RoHS Details
Type EDO DRAM Mounting Style SMD/SMT
Package / Case TSOP-44 Data Bus Width 16 bit
Organization 1 M x 16 Memory Size 16 Mbit
Access Time 50 ns Supply Voltage - Max 5.5 V
Supply Voltage - Min 4.5 V Supply Current - Max 90 mA
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Series IS41C16100C Brand ISSI
Moisture Sensitive Yes Product Type DRAM
Factory Pack Quantity 117 Subcategory Memory & Data Storage
Unit Weight 0.017990 oz

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