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IRLR2908PBF

N-Channel Silicon MOSFET with 80V Voltage Rating and 39A Current Capacity in DPAK Package

Quantity Unit Price(USD) Ext. Price
1 $0.419 $0.42
200 $0.162 $32.40
500 $0.156 $78.00
1000 $0.153 $153.00

Inventory:6,897

*The price is for reference only.
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Overview of IRLR2908PBF

The IRLR2908PBF is an N-channel power MOSFET with a low on-resistance and high current-handling capability, making it ideal for power management applications. This MOSFET is designed to switch high currents with minimal power loss, offering efficiency and reliability in various electronic circuits.

Pinout

(Note: The pin configuration provided below is a general representation. Refer to the datasheet for precise details.)

  • G: Gate Pin
  • D: Drain Pin
  • S: Source Pin
  • V: Thermal Pad
  • N/C: No Connection

Circuit Diagram

Include a circuit diagram showing the connections and usage of the IRLR2908PBF MOSFET for better understanding of its application.

Key Features

  • Low On-Resistance: The IRLR2908PBF offers a low on-resistance, resulting in minimal voltage drops and power dissipation.
  • High Current Handling: This MOSFET can efficiently handle high continuous currents, making it suitable for power management tasks.
  • Fast Switching Speed: With its fast switching characteristics, the IRLR2908PBF enables rapid switching in electronic circuits.
  • Thermal Performance: The thermal pad design of the MOSFET enhances heat dissipation, ensuring optimal performance under high load conditions.
  • Robust Construction: Built to withstand high voltage and current levels, the IRLR2908PBF is durable and reliable in demanding applications.

Note: Refer to the IRLR2908PBF datasheet for detailed technical specifications and performance data.

Application

  • Power Management Systems: Ideal for use in power management systems, voltage regulators, and motor control applications.
  • Switching Circuits: Suitable for switching circuits, DC-DC converters, and synchronous rectification circuits.
  • Electronic Load Control: Used in electronic load control, power supplies, and battery management systems.

Functionality

The IRLR2908PBF N-channel MOSFET is designed to control and switch high currents with low on-resistance, providing efficient power management in various electronic systems.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the control signal for driving the MOSFET.
  • Drain-Source Connection: Ensure proper connection between the drain (D) and source (S) pins based on the circuit requirements.
  • Thermal Consideration: Properly mount the MOSFET with the thermal pad (V) to ensure effective heat dissipation.

Frequently Asked Questions

Q: Is the IRLR2908PBF suitable for high-frequency applications?
A: Yes, the fast switching speed of the IRLR2908PBF makes it suitable for high-frequency applications requiring efficient power handling.

Equivalent

For alternatives with similar characteristics, consider the following:

  • IRLR2905PBF: An N-channel MOSFET with comparable performance and characteristics to the IRLR2908PBF.
  • IRLR3110PBF: This MOSFET offers similar power handling capabilities and thermal performance for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 30 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 22 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 120 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Fall Time 55 ns
Forward Transconductance - Min 35 S Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 95 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 12 ns Width 6.22 mm
Part # Aliases SP001567410 Unit Weight 0.011640 oz

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