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IRLD120PBF

Vishay IRLD120PBF N-channel MOSFET Transistor, 1.3 A, 100 V, 4-Pin HVMDIP

Quantity Unit Price(USD) Ext. Price
1 $0.741 $0.74
10 $0.604 $6.04
30 $0.535 $16.05
100 $0.467 $46.70
500 $0.425 $212.50
1000 $0.404 $404.00

Inventory:5,054

*The price is for reference only.
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Overview of IRLD120PBF

The IRLD120PBF is a power MOSFET transistor designed for use in high-current switching applications. This N-channel MOSFET features a low on-resistance and robust performance characteristics, making it suitable for power management in various electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate: Input control terminal for the MOSFET
  • Drain: Output terminal for the MOSFET


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRLD120PBF MOSFET for a visual representation.

Key Features

  • High Power Handling Capability: The IRLD120PBF can handle high currents and power levels, making it suitable for power switching applications.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power losses and improves efficiency in electronic circuits.
  • Fast Switching Speed: The rapid switching speed of the IRLD120PBF ensures quick response times in switching applications.
  • Enhanced Thermal Performance: This MOSFET is designed to dissipate heat efficiently, enhancing its thermal management capabilities.
  • Robust Construction: The IRLD120PBF features a robust construction for reliable operation under varying load conditions.

Note: For detailed technical specifications, please refer to the IRLD120PBF datasheet.

Application

  • Power Management: Ideal for power management applications in electronic devices, including motor control, power supplies, and LED lighting.
  • Switching Circuits: Suitable for high-current switching circuits requiring efficient power handling and fast switching speed.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power in applications such as solar inverters and uninterruptible power supplies.

Functionality

The IRLD120PBF is a high-power N-channel MOSFET transistor that enables efficient power switching in a wide range of applications. It provides reliable performance and robust power handling capabilities.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the Load to the Drain and the Source terminals to allow current flow through the MOSFET.
  • Thermal Management: Ensure proper heat sinking and thermal management to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: Can the IRLD120PBF be used for automotive applications?
A: Yes, the IRLD120PBF is suitable for automotive applications that require high-power switching capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IRLD120PBF:

  • IRF3205: A power MOSFET with similar specifications and performance characteristics to the IRLD120PBF.
  • IRLB8748: This N-channel MOSFET provides comparable power handling capabilities and efficiency for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case DIP-4 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 1.3 A Rds On - Drain-Source Resistance 270 mOhms
Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 12 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 1.3 W
Channel Mode Enhancement Brand Vishay Semiconductors
Configuration Single Fall Time 27 ns
Forward Transconductance - Min 1.9 S Height 3.37 mm
Length 6.29 mm Product Type MOSFET
Rise Time 64 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 21 ns Typical Turn-On Delay Time 9.8 ns
Width 5 mm Unit Weight 0.031537 oz

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IRLD120PBF

Vishay IRLD120PBF N-channel MOSFET Transistor, 1.3 A, 100 V, 4-Pin HVMDIP

Inventory:

5,054