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MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB

Quantity Unit Price(USD) Ext. Price
1 $0.882 $0.88
10 $0.753 $7.53
50 $0.682 $34.10
100 $0.601 $60.10
500 $0.565 $282.50
1500 $0.548 $822.00


*The price is for reference only.
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Please submit RFQ for IRL2203NPBF or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRL2203NPBF

MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

Key Features





The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRL2203NPBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Date Of Intro 1996-02-01
Samacsys Manufacturer Infineon Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 290 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 116 A Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.007 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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