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IRL2203NPBF

Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

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  • Part Number : IRL2203NPBF

  • Package/Case : TO-220AB

  • Brands : International Rectifier

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : IRL2203NPBF DataSheet (PDF)

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Technical Attributes

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead-Free

Key Features

AVALANCHE RATED, HIGH RELIABILITY

Application

SWITCHING

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