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IRGP50B60PDPBF

Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC

Quantity Unit Price(USD) Ext. Price
1 $2.567 $2.57
200 $0.993 $198.60
500 $0.959 $479.50
1000 $0.941 $941.00

Inventory:6,357

*The price is for reference only.
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Overview of IRGP50B60PDPBF

The IRGP50B60PDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high power switching applications in various electronic systems. With a maximum collector current of 75A and a breakdown voltage of 600V, this IGBT offers robust performance for demanding power control requirements.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connected to the high-power terminal for current flow.
  • Emitter (E): Connected to the low-power terminal for current flow.
  • Gate (G): Input terminal for controlling the IGBT's switching operation.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRGP50B60PDPBF IGBT for a visual representation.

Key Features

  • High Collector Current: With a maximum collector current of 75A, the IRGP50B60PDPBF is suitable for high-power switching applications.
  • High Breakdown Voltage: The 600V breakdown voltage enables the IGBT to handle high voltage levels in power control circuits.
  • Low Saturation Voltage: This IGBT exhibits low saturation voltage, minimizing power dissipation and improving efficiency.
  • Fast Switching Speed: The IRGP50B60PDPBF offers fast switching times, making it ideal for applications requiring rapid power control.
  • Robust Construction: Designed for rugged environments, the IGBT features robust construction for reliable performance in demanding conditions.

Note: For detailed technical specifications, please refer to the IRGP50B60PDPBF datasheet.

Application

  • Motor Drives: Ideal for use in motor drive circuits where high-power switching is required for controlling electric motors.
  • Power Inverters: Suitable for power inverter applications in renewable energy systems and industrial power electronics.
  • Induction Heating: Used in induction heating systems for precise and efficient power control in heating processes.

Functionality

The IRGP50B60PDPBF is a high-performance IGBT designed to handle high current and voltage levels, providing efficient power control in various electronic applications.

Usage Guide

  • Power Connections: Connect the collector (C) and emitter (E) pins to the power supply and load, respectively.
  • Gate Control: Apply the appropriate gate (G) voltage to control the switching operation of the IGBT.
  • Heat Management: Proper heat sinking and thermal management are essential to ensure the IGBT operates within its temperature limits.

Frequently Asked Questions

Q: What is the maximum collector current of the IRGP50B60PDPBF?
A: The IRGP50B60PDPBF has a maximum collector current of 75A, making it suitable for high-power applications.

Q: Is the IRGP50B60PDPBF suitable for induction heating systems?
A: Yes, the IRGP50B60PDPBF is commonly used in induction heating systems due to its high current and voltage handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IRGP50B60PDPBF:

  • IRG4PH40UDPBF: A high-performance IGBT with similar current and voltage ratings, suitable for demanding power control applications.
  • IXGH50N60C2D1: This IGBT offers comparable performance and specifications, providing an alternative for high-power switching needs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 75 A
Pd - Power Dissipation 370 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand Infineon Technologies
Continuous Collector Current Ic Max 75 A Gate-Emitter Leakage Current 100 nA
Height 20.7 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 400
Subcategory IGBTs Width 5.31 mm
Unit Weight 1.340411 oz

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IRGP50B60PDPBF

Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC

Inventory:

6,357