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IRGP35B60PDPBF

Tube packaging of Transistor IGBT Chip with N-Channel, 600V 60A 308W

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Overview of IRGP35B60PDPBF

The IRGP35B60PDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power electronic applications. It features a high input impedance and fast switching performance, making it ideal for use in motor control, renewable energy systems, and industrial power supplies.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: Emitter terminal of the IGBT
  • Collector: Collector terminal of the IGBT
  • Gate: Gate terminal for controlling the IGBT
  • Emitter: Emitter terminal of the IGBT
  • Negative Terminal: Negative input terminal
  • Positive Terminal: Positive input terminal
  • Drive Signal Input: Input for controlling the IGBT
  • Temperature Sense: Connection for temperature sensing


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRGP35B60PDPBF IGBT for a visual representation.

Key Features

  • High Efficiency: The IRGP35B60PDPBF offers high efficiency in power conversion applications, reducing energy losses.
  • Fast Switching Speed: This IGBT provides fast switching characteristics, enabling rapid control of power flow.
  • Low Saturation Voltage: Features low saturation voltage for minimized power dissipation and heat generation.
  • Temperature Sensing: Includes temperature sensing capability for thermal management and protection.
  • High Input Impedance: The high input impedance allows for effective and precise control of the IGBT.

Note: For detailed technical specifications, please refer to the IRGP35B60PDPBF datasheet.

Application

  • Motor Control: Ideal for use in motor control applications, including variable frequency drives and servo systems.
  • Renewable Energy Systems: Suitable for inverters and converters in solar and wind power systems.
  • Industrial Power Supplies: Used in industrial power supply units for efficient power management.

Functionality

The IRGP35B60PDPBF is an Insulated Gate Bipolar Transistor designed for high-efficiency power electronic applications. It provides precise and rapid control over power flow, making it indispensable in various power management systems.

Usage Guide

  • Connection: Connect the emitter, collector, and gate terminals according to the circuit requirements and input signals.
  • Drive Signal: Apply the appropriate drive signal to the gate terminal for controlling the IGBT's switching behavior.
  • Temperature Monitoring: Utilize the temperature sensing feature for thermal protection and monitoring.

Frequently Asked Questions

Q: What is the typical switching frequency of the IRGP35B60PDPBF?
A: The IRGP35B60PDPBF can achieve switching frequencies typical for high-power applications, but specific details can be found in the datasheet.

Q: Can the IRGP35B60PDPBF be used in inductive load applications?
A: Yes, the IRGP35B60PDPBF is suitable for driving inductive loads and is commonly used in motor control and power conversion applications.

Equivalent

For similar functionalities, consider these alternatives to the IRGP35B60PDPBF:

  • FGL40N120AND: This is a high-power IGBT with similar characteristics, suitable for industrial and power electronic applications.
  • IXGN50N120A3: Another alternative for high-power IGBT applications, offering comparable performance and features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-247-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.85 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 60 A
Pd - Power Dissipation 308 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand Infineon Technologies
Continuous Collector Current Ic Max 60 A Gate-Emitter Leakage Current 100 nA
Height 20.7 mm Length 15.87 mm
Product Type IGBT Transistors Factory Pack Quantity 400
Subcategory IGBTs Width 5.31 mm
Unit Weight 1.340411 oz

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