• packageimg
packageimg

IRGIB15B60KD1P

Suitable for high power applications requiring efficient switching capabilities

Quantity Unit Price(USD) Ext. Price
1 $13.437 $13.44
10 $12.956 $129.56
30 $12.123 $363.69
100 $11.396 $1,139.60

Inventory:8,407

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IRGIB15B60KD1P using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRGIB15B60KD1P

The IRGIB15B60KD1P is an insulated gate bipolar transistor (IGBT) designed for high-efficiency power electronic applications. This IGBT features a high current rating and low saturation voltage, making it suitable for use in motor drives, inverters, and other power control systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCE: Collector-Emitter Voltage
  • VGE: Gate-Emitter Voltage
  • VGEM: Peak Gate-Emitter Voltage
  • IC: Collector Current
  • ICM: Peak Collector Current
  • PTOT: Total Power Dissipation
  • TJ: Junction Temperature
  • TSTG: Storage Temperature

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRGIB15B60KD1P IGBT for a visual representation.

Key Features

  • High Current Rating: The IRGIB15B60KD1P offers a high collector current, enabling it to handle significant power requirements in various applications.
  • Low Saturation Voltage: With low VCE(sat), this IGBT minimizes power dissipation and enhances efficiency in power electronic circuits.
  • Fast Switching Speed: The IGBT provides fast switching characteristics, contributing to improved performance in power control systems.
  • High Thermal Cycling Capability: It is designed to withstand high thermal cycling, ensuring reliable operation under demanding conditions.
  • Integrated Gate-Emitter Resistor: The built-in gate-emitter resistor simplifies the drive circuit design for the IGBT.

Note: For detailed technical specifications, please refer to the IRGIB15B60KD1P datasheet.

Application

  • Motor Drives: Ideal for use in motor control applications, such as motor drives for industrial machinery and electric vehicles.
  • Power Inverters: Suitable for power inverter systems used in renewable energy, UPS (uninterruptible power supplies), and motor drive applications.
  • Power Control Systems: Used in a wide range of power control systems requiring high-current switching and efficient power handling.

Functionality

The IRGIB15B60KD1P is a high-performance IGBT designed to handle high power requirements in power electronic applications. It provides efficient power control and switching capabilities with low saturation voltage and fast switching speed.

Usage Guide

  • Power Supply: Connect the collector and emitter terminals to the appropriate power supply voltages.
  • Gate Drive: Apply the specified gate-emitter voltage to control the switching behavior of the IGBT.
  • Heat Dissipation: Ensure proper thermal management to maintain the junction temperature within the specified limits.

Frequently Asked Questions

Q: Can the IRGIB15B60KD1P be used in high-frequency switching applications?
A: Yes, the IRGIB15B60KD1P is capable of high-speed switching suitable for high-frequency applications in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the IRGIB15B60KD1P:

  • IRG4BC20KD: A high-current IGBT with similar performance characteristics and package options.
  • IXGH40N60C2D1: This IGBT offers comparable power handling capabilities and switching characteristics, providing an alternative for power electronic designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-220FP-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 19 A
Pd - Power Dissipation 52 W Minimum Operating Temperature - 55 C
Brand Infineon Technologies Height 9.02 mm
Length 10.67 mm Product Type IGBT Transistors
Factory Pack Quantity 2000 Subcategory IGBTs
Width 4.83 mm Unit Weight 0.081130 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

packageimg

IRGIB15B60KD1P

Suitable for high power applications requiring efficient switching capabilities

Inventory:

8,407