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IRG4IBC30W

IRG4IBC30W: A cutting-edge Trans IGBT Chip optimized for power electronics

Inventory:5,953

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Overview of IRG4IBC30W

The IRG4IBC30W is a Insulated Gate Bipolar Transistor (IGBT) that features a 600V voltage rating and a current rating of 55A. It is designed for high efficiency and high speed switching applications in various power electronics systems. The IGBT combines the advantages of both the MOSFET and the bipolar transistor to achieve efficient and precise control of power.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C Collector : Collector terminal of the IGBT
  • G Gate : Gate terminal for controlling the IGBT
  • E Emitter : Emitter terminal of the IGBT

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4IBC30W IGBT for a visual representation.

Key Features

  • High Voltage Rating: The IRG4IBC30W offers a high voltage rating of 600V, making it suitable for a wide range of power control applications.
  • High Current Capability: With a current rating of 55A, this IGBT can handle high current loads with efficiency.
  • High Efficiency and Speed: Designed for high-speed switching applications, the IRG4IBC30W offers high efficiency in power control systems.
  • Temperature Stability: The IGBT is designed to operate reliably across a wide temperature range, ensuring stability in varying environmental conditions.

Note: For detailed technical specifications, please refer to the IRG4IBC30W datasheet.

Application

  • Motor Drives: Ideal for use in motor control applications, such as variable frequency drives and servo systems.
  • Power Inverters: Suitable for power inverter systems used in renewable energy applications and motor drives.
  • Switching Power Supplies: Used in high-frequency switching power supply systems for efficient power management.

Functionality

The IRG4IBC30W IGBT is designed to provide precise and efficient control of high power in various applications, making it an essential component in power electronics systems.

Usage Guide

  • Gate Control: Apply appropriate gate voltage and current to control the on/off switching of the IGBT.
  • Heat Management: Proper heatsinking and thermal management are essential to ensure the IGBT operates within safe temperature limits.
  • Load Connection: Connect the load between the collector and the emitter terminals according to the circuit requirements.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRG4IBC30W?
A: The IRG4IBC30W has a maximum voltage rating of 600V, making it suitable for high-voltage applications.

Q: Can the IRG4IBC30W be used in motor drive systems?
A: Yes, the IRG4IBC30W is commonly used in motor drive applications, providing efficient power control for motors and drives.

Equivalent

For similar functionalities, consider these alternatives to the IRG4IBC30W:

  • IRG4BC30FD: A similar IGBT with comparable voltage and current ratings, suitable for high-power applications.
  • IRFP460: This is a power MOSFET with characteristics suitable for similar high-power switching applications.
  • IXGH40N60C2D1: A high-speed IGBT with advanced features for high-efficiency power control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Packaging Tube Part Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 17 A
Current - Collector Pulsed (Icm) 92 A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Power - Max 45 W Switching Energy 130µJ (on), 130µJ (off)
Input Type Standard Gate Charge 51 nC
Td (on/off) @ 25°C 25ns/99ns Test Condition 480V, 12A, 23Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-220-3 Full Pack Supplier Device Package PG-TO220-FP
Base Product Number IRG4IBC

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IRG4IBC30W

IRG4IBC30W: A cutting-edge Trans IGBT Chip optimized for power electronics

Inventory:

5,953