IRG4BC30UDPBF
IGBT Transistors 600V UltraFast 8-60kHz
Inventory:5,098
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Part Number : IRG4BC30UDPBF
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Package/Case : TO-220AB
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Manufacturer : INFINEON
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Components Classification : Single IGBTs
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Datesheet : IRG4BC30UDPBF DataSheet (PDF)
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Series : test_f085
The IRG4BC30UDPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for high efficiency and high-speed switching applications. It is particularly suited for use in motor control, power supply, and lighting applications where reliability and performance are crucial. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRG4BC30UDPBF IGBT for a visual representation. Note: For detailed technical specifications, please refer to the IRG4BC30UDPBF datasheet. Functionality The IRG4BC30UDPBF is an IGBT that combines the input control of a MOSFET with the high-current handling capability of a bipolar transistor. It enables efficient and precise switching in various power electronics applications. Usage Guide Q: Is the IRG4BC30UDPBF suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRG4BC30UDPBF:Overview of IRG4BC30UDPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, this IGBT is designed for high-speed switching applications including high-frequency operation.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IRG4BC30UDPBF | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 23 A |
Collector-Emitter Voltage-Max | 600 V | Configuration | SINGLE WITH BUILT-IN DIODE |
Fall Time-Max (tf) | 130 ns | Gate-Emitter Thr Voltage-Max | 6 V |
Gate-Emitter Voltage-Max | 20 V | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 100 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 300 ns |
Turn-on Time-Nom (ton) | 62 ns |
Equivalent Parts
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
IRG4BC30UDPBF Equivalent Parts
For the IRG4BC30UDPBF component, you may consider these replacement and alterative parts.
Models | Manufacturer | Package/Case | Description |
---|---|---|---|
IRG4BC30U | Similar IGBT transistor with similar specifications | ||
IXGH30N60B | Alternative IGBT transistor suitable for similar applications |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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IRG4BC30UDPBF
IGBT Transistors 600V UltraFast 8-60kHz
Inventory:
5,098Warranty & Returns
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