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IRG4BC30UDPBF

IGBT Transistors 600V UltraFast 8-60kHz

Inventory:5,098

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Overview of IRG4BC30UDPBF

The IRG4BC30UDPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for high efficiency and high-speed switching applications. It is particularly suited for use in motor control, power supply, and lighting applications where reliability and performance are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Output terminal for the high-power connection
  • Emitter (E): Ground terminal
  • Gate (G): Input terminal for controlling the IGBT switching

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4BC30UDPBF IGBT for a visual representation.

Key Features

  • High Efficiency: The IRG4BC30UDPBF offers high efficiency in power conversion applications, reducing energy losses.
  • Fast Switching Speed: With its high-speed switching capability, this IGBT allows for rapid switching transitions.
  • Low Saturation Voltage: The low saturation voltage of the IRG4BC30UDPBF results in minimal power dissipation during conduction.
  • High Input Impedance: The IGBT features high input impedance, making it easy to drive and control.
  • Overcurrent Protection: Built-in overcurrent protection helps safeguard the device and connected components.

Note: For detailed technical specifications, please refer to the IRG4BC30UDPBF datasheet.

Application

  • Motor Control: Ideal for motor control applications due to its high-speed switching and efficiency.
  • Power Supply: Suitable for use in power supply units where high efficiency and reliability are required.
  • Lighting Systems: Used in lighting systems for efficient power management and control.

Functionality

The IRG4BC30UDPBF is an IGBT that combines the input control of a MOSFET with the high-current handling capability of a bipolar transistor. It enables efficient and precise switching in various power electronics applications.

Usage Guide

  • Power Connections: Connect the collector (C) terminal to the load, emitter (E) to ground, and gate (G) to the controlling circuit.
  • Gate Drive: Provide proper gate drive voltage and current to ensure effective switching performance.
  • Heat Dissipation: Consider adequate heat sinking to manage the heat generated during operation.

Frequently Asked Questions

Q: Is the IRG4BC30UDPBF suitable for high-frequency applications?
A: Yes, this IGBT is designed for high-speed switching applications including high-frequency operation.

Equivalent

For similar functionalities, consider these alternatives to the IRG4BC30UDPBF:

  • IRG4PC40UDPBF: A high-power IGBT with similar characteristics and performance to the IRG4BC30UDPBF.
  • IRGP4064DPBF: This IGBT offers comparable features and is suitable for demanding power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRG4BC30UDPBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Case Connection COLLECTOR Collector Current-Max (IC) 23 A
Collector-Emitter Voltage-Max 600 V Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 130 ns Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 100 W
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 300 ns
Turn-on Time-Nom (ton) 62 ns

Equivalent Parts

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

IRG4BC30UDPBF Equivalent Parts

For the IRG4BC30UDPBF component, you may consider these replacement and alterative parts.

Models Manufacturer Package/Case Description
IRG4BC30U Similar IGBT transistor with similar specifications
IXGH30N60B Alternative IGBT transistor suitable for similar applications

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IRG4BC30UDPBF

IGBT Transistors 600V UltraFast 8-60kHz

Inventory:

5,098