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IRG4BC20K

IRG4BC20K Insulated Gate Bipolar Transistor 16A TO220

Inventory:6,693

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Overview of IRG4BC20K

The IRG4BC20K is a high-speed, high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for power electronic applications. This IGBT features a compact and rugged design, making it ideal for use in motor drives, power supply units, and inverters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: E
  • Collector: C
  • Gate: G
  • Collector Current: IC
  • Gate Voltage: VG
  • Diode Forward Voltage: VFD
  • Emitter Current: IE
  • Diode Continuous Forward Current: IFSM

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRG4BC20K IGBT for a visual representation.

Key Features

  • High-Speed Switching: The IRG4BC20K offers fast switching speeds, allowing for efficient power control in various applications.
  • High Voltage Rating: With a high voltage rating, this IGBT can withstand high voltage levels, making it suitable for high-power applications.
  • Rugged Design: The rugged construction of the IRG4BC20K ensures reliable operation in demanding environments.
  • Low Saturation Voltage: The low saturation voltage of this IGBT reduces power losses and enhances overall efficiency.
  • Short Circuit Protection: Incorporates short circuit protection to prevent damage to the device during fault conditions.

Note: For detailed technical specifications, please refer to the IRG4BC20K datasheet.

Application

  • Motor Drives: Ideal for use in motor drive systems for controlling the speed and direction of motors.
  • Power Supply Units: Suitable for applications where stable power supply control is required.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The IRG4BC20K is a high-speed IGBT that enables efficient power switching and control in various electronic applications. It provides reliable performance and high power handling capabilities.

Usage Guide

  • Power Connections: Connect the collector, emitter, and gate pins to the appropriate power supply and control signals.
  • Gate Control: Apply the specified gate voltage to control the switching action of the IGBT.
  • Heat Management: Implement adequate heat sinking to dissipate heat generated during operation for optimal performance.

Frequently Asked Questions

Q: Is the IRG4BC20K suitable for high-temperature environments?
A: Yes, the IRG4BC20K is designed to withstand elevated temperatures and is suitable for use in high-temperature environments.

Equivalent

For similar functionalities, consider these alternatives to the IRG4BC20K:

  • IRGP50B60PD1: A high-voltage IGBT with comparable performance characteristics to the IRG4BC20K, suitable for power electronic applications.
  • IXGR40N60C2D1: This IGBT offers high-speed switching capabilities and rugged design, similar to the IRG4BC20K for demanding applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tube Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 32 A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A
Power - Max 60 W Switching Energy 150µJ (on), 250µJ (off)
Input Type Standard Gate Charge 34 nC
Td (on/off) @ 25°C 28ns/150ns Test Condition 480V, 9A, 50Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-220-3 Supplier Device Package TO-220AB

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IRG4BC20K

IRG4BC20K Insulated Gate Bipolar Transistor 16A TO220

Inventory:

6,693