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IRFZ44ZSPBF

55V, 51A power transistor

Inventory:7,681

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Overview of IRFZ44ZSPBF

The IRFZ44ZSPBF is a power MOSFET transistor designed for high-frequency switching and amplification applications. This N-channel MOSFET features a low on-state resistance and fast switching performance, making it suitable for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • G: Gate
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFZ44ZSPBF MOSFET for a visual representation.

Key Features

  • High-Frequency Switching: The IRFZ44ZSPBF is designed for high-speed switching applications, enabling efficient power control and regulation.
  • Low On-State Resistance: This MOSFET offers low conduction losses due to its low on-state resistance, ensuring minimal power dissipation.
  • Fast Switching Performance: With its fast switching characteristics, the IRFZ44ZSPBF provides rapid response times in switching applications.
  • High Power Dissipation: This MOSFET is capable of handling high power levels, making it suitable for power amplification and management.

Note: For detailed technical specifications, please refer to the IRFZ44ZSPBF datasheet.

Application

  • Power Management: Ideal for power switching and regulation in various electronic systems and circuits.
  • Motor Control: Suitable for use in motor control circuits for controlling the speed and direction of DC motors.
  • Power Amplification: Used in power amplifier circuits for efficient amplification of signals.

Functionality

The IRFZ44ZSPBF MOSFET offers high-speed switching and low on-state resistance, making it an efficient component for power management and amplification in electronic systems.

Usage Guide

  • Connection: Connect the drain (D), gate (G), and source (S) pins to the respective terminals in the circuit as per the application requirements.
  • Gate Voltage: Apply the appropriate gate-source voltage to control the switching behavior of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking or cooling mechanisms to manage the power dissipation during operation.

Frequently Asked Questions

Q: Is the IRFZ44ZSPBF suitable for PWM (Pulse Width Modulation) applications?
A: Yes, the fast switching performance of the IRFZ44ZSPBF makes it well-suited for PWM control in power electronics applications.

Equivalent

For similar functionalities, consider these alternatives to the IRFZ44ZSPBF:

  • IRF540SPBF: This N-channel MOSFET offers similar characteristics to the IRFZ44ZSPBF and is suitable for high-frequency switching applications.
  • IRF3205SPBF: A power MOSFET with comparable performance, providing efficient switching and power handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-263-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 51 A Rds On - Drain-Source Resistance 13.9 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 29 nC
Pd - Power Dissipation 80 W Brand Infineon Technologies
Configuration Single Height 4.4 mm
Length 10 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 9.25 mm
Part # Aliases SP001565260 Unit Weight 0.139332 oz

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IRFZ44ZSPBF

55V, 51A power transistor

Inventory:

7,681