• IRFS9N60APBF TO-263-3
IRFS9N60APBF TO-263-3

IRFS9N60APBF

Power Field-Effect Transistor

Inventory:8,099

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Overview of IRFS9N60APBF

The IRFS9N60APBF is a power MOSFET transistor designed for high-performance switching applications. With a voltage rating of 600V and a current rating of 9A, this MOSFET is suitable for various power electronics circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFS9N60APBF MOSFET for a visual representation.

Key Features

  • High Voltage Rating: 600V voltage withstand capability for robust performance in high-power circuits.
  • High Current Capability: 9A continuous drain current for efficient power handling.
  • Low On-Resistance: Low RDS(on) for minimized power loss and improved efficiency.
  • Fast Switching Speed: Quick turn-on and turn-off times for responsive switching applications.
  • Enhanced Thermal Performance: Advanced thermal characteristics for reliable operation under high loads.

Note: For detailed technical specifications, please refer to the IRFS9N60APBF datasheet.

Application

  • Switching Power Supplies: Ideal for use in switching power supply circuits.
  • Motor Control: Suitable for motor control applications requiring high voltage and current handling.
  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The IRFS9N60APBF MOSFET is designed to provide high-performance switching capabilities in various power electronics applications, ensuring reliable and efficient operation.

Usage Guide

  • Gate Drive: Apply the proper gate voltage to turn the MOSFET on/off effectively.
  • Drain Connection: Connect the load to the drain pin for power transmission.
  • Source Connection: Ground the source pin for proper operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRFS9N60APBF?
A: The IRFS9N60APBF has a maximum voltage rating of 600V, making it suitable for high-power applications.

Q: Is the IRFS9N60APBF suitable for motor drive applications?
A: Yes, the IRFS9N60APBF is ideal for motor control and drive applications due to its high current capability and voltage rating.

Equivalent

For similar functionalities, consider these alternatives to the IRFS9N60APBF:

  • IRF9Z34N: A power MOSFET with comparable voltage and current ratings for power switching applications.
  • IRFB4110: This MOSFET offers similar performance characteristics to the IRFS9N60APBF with slight variations in specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 9.2 A
Rds On - Drain-Source Resistance 750 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 49 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 170 W Channel Mode Enhancement
Series IRFS Brand Vishay Semiconductors
Configuration Single Height 4.83 mm
Length 10.67 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Width 9.65 mm Unit Weight 0.011640 oz

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IRFS9N60APBF

Power Field-Effect Transistor

Inventory:

8,099