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IRFS3206PBF

The IRFS3206PBF is a 60V MOSFET with a N-CH HEXFET design, boasting an on-resistance as low as 3mOhms and a gate charge of 120nC

Inventory:8,331

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Overview of IRFS3206PBF

The IRFS3206PBF is a power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high current capability, making it suitable for demanding power electronics designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Controls the switching operation of the MOSFET.
  • Drain (D): Connects to the load circuit for power switching.

Circuit Diagram

Include a circuit diagram showcasing the utilization of the IRFS3206PBF MOSFET in a typical power switching circuit.

Key Features

  • Low On-State Resistance: The IRFS3206PBF offers low RDS(on) for efficient power conversion.
  • High Current Capability: With a high drain current rating, it is capable of handling substantial power loads.
  • Fast Switching Speed: Provides rapid switching for improved efficiency in power electronics applications.
  • Enhanced Thermal Performance: Designed for effective heat dissipation to maintain optimal operating temperatures.

Note: For detailed technical specifications, please refer to the IRFS3206PBF datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power switching.
  • Motor Control: Suitable for motor control applications where high-current switching is required.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The IRFS3206PBF MOSFET transistor is utilized for high-power switching applications, providing low on-state resistance and high current handling capabilities to meet the demands of power electronics systems.

Usage Guide

  • Gate Connection: Connect the gate pin to the driving circuit for controlling the MOSFET switching operation.
  • Drain Connection: Link the drain pin to the load circuit for power delivery.
  • Source Connection: Connect the source pin to complete the current path back to the MOSFET.

Frequently Asked Questions

Q: Is the IRFS3206PBF suitable for high-frequency switching applications?
A: Yes, the IRFS3206PBF offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For alternatives with similar functionalities, consider the following:

  • IRF3205: A comparable power MOSFET transistor with high current capability and low on-state resistance.
  • IRFS3107-7P: Another power MOSFET option with similar performance characteristics to the IRFS3206PBF.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 210 A Rds On - Drain-Source Resistance 2.4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 120 nC
Pd - Power Dissipation 300 W Brand Infineon Technologies
Configuration Single Height 4.4 mm
Length 10 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 9.25 mm
Part # Aliases SP001557264 Unit Weight 0.139332 oz

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IRFS3206PBF

The IRFS3206PBF is a 60V MOSFET with a N-CH HEXFET design, boasting an on-resistance as low as 3mOhms and a gate charge of 120nC

Inventory:

8,331