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IRFR9120PBF

IRFR9120PBF, P-channel MOSFET Transistor 5.6 A 100 V, 3-Pin D-PAK

Quantity Unit Price(USD) Ext. Price
975 $0.370 $360.75
525 $0.388 $203.70
75 $0.425 $31.88
30 $0.486 $14.58
10 $0.548 $5.48
1 $0.671 $0.67

Inventory:2,377

*The price is for reference only.
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Overview of IRFR9120PBF

The IRFR9120PBF is an advanced power MOSFET designed for various high-current switching applications. It features a low on-state resistance and fast switching performance, making it ideal for power management and conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFR9120PBF MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRFR9120PBF offers a low RDS(on), resulting in minimal voltage drop during operation.
  • High Current Handling: Capable of handling high currents, making it suitable for power applications.
  • Fast Switching Speed: Provides rapid switching characteristics for efficient power management.
  • Enhanced Thermal Performance: Designed to dissipate heat effectively to ensure reliable operation under high loads.
  • Low Gate Threshold Voltage: Features a low gate voltage threshold for improved drive characteristics.

Note: For detailed technical specifications, please refer to the IRFR9120PBF datasheet.

Application

  • Switching Power Supplies: Ideal for use in high-frequency switching power supply circuits.
  • Motor Control: Suitable for controlling high-current motors and inductive loads.
  • DC-DC Converters: Used in switching regulator circuits for efficient voltage conversion.

Functionality

The IRFR9120PBF power MOSFET is designed to efficiently switch high currents in various power management and conversion applications, ensuring minimal power loss and reliable operation.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuitry for controlling the MOSFET.
  • Drain and Source Connections: Utilize the drain (D) and source (S) pins for power flow in the intended circuit configuration.

Frequently Asked Questions

Q: Can the IRFR9120PBF be used for high-frequency applications?
A: Yes, the IRFR9120PBF is suitable for high-frequency switching applications due to its fast switching speed and low on-state resistance.

Equivalent

For similar functionalities, consider these alternatives to the IRFR9120PBF:

  • IRF9540N: A power MOSFET with comparable characteristics suitable for high-current switching applications.
  • BSC028N06NS: This MOSFET offers similar performance and features for power management and conversion circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 5.6 A
Rds On - Drain-Source Resistance 600 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 18 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 42 W Channel Mode Enhancement
Series IRFR Brand Vishay Semiconductors
Configuration Single Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Unit Weight 0.011640 oz

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IRFR9120PBF

IRFR9120PBF, P-channel MOSFET Transistor 5.6 A 100 V, 3-Pin D-PAK

Inventory:

2,377