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IRFR9110PBF

P-channel MOSFET transistor IRFR9110PBF has a maximum current rating of 3.1 A and a voltage rating of 100 V, housed in a 3-pin D-PAK package

Inventory:5,182

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Overview of IRFR9110PBF

The IRFR9110PBF is an N-channel Power MOSFET transistor designed for high-performance switching applications. It features a low on-state resistance and high-speed switching capability, making it suitable for power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control terminal for switching the MOSFET on and off.
  • Drain (D): Connects to the positive supply voltage during operation.
  • Source (S): Connects to the ground or negative supply voltage.
  • Sense: Current sensing terminal for feedback or protection circuits.
  • Body Diode: Internal diode for allowing current flow in one direction when the MOSFET is in reverse bias.
  • No Connection (NC): Unused pin.
  • No Connection (NC): Unused pin.
  • No Connection (NC): Unused pin.
  • No Connection (NC): Unused pin.
  • No Connection (NC): Unused pin.

Circuit Diagram

Include a circuit diagram illustrating the typical application of the IRFR9110PBF MOSFET for visual representation.

Key Features

  • N-Channel Power MOSFET: Suitable for switching applications where high efficiency and low on-state resistance are critical.
  • Low On-Resistance: Ensures minimal voltage drop and power dissipation during operation.
  • High-Speed Switching: Capable of switching at high frequencies, making it suitable for power management in fast-switching circuits.
  • Enhanced Thermal Performance: Designed to handle high power levels with effective heat dissipation.
  • Robust Construction: Offers reliability and durability in demanding applications.

Note: For detailed technical specifications, please refer to the IRFR9110PBF datasheet.

Application

  • Switching Power Supplies: Ideal for use in DC-DC converters and other switching power supply applications.
  • Motor Control: Suitable for controlling DC motors and other actuators in industrial and automotive applications.
  • Electronic Loads: Used in circuits requiring high-speed switching and efficient power management.

Functionality

The IRFR9110PBF N-channel MOSFET provides efficient switching capabilities with low on-resistance, making it a preferred choice for various power management applications.

Usage Guide

  • Gate Drive: Apply a suitable gate voltage relative to the source terminal (S) to switch the MOSFET on and off.
  • Heat Management: Ensure adequate heat sinking or cooling to maintain reliable operation, especially under high load conditions.
  • Protection: Consider using appropriate circuit protection techniques to prevent overcurrent or overvoltage conditions.

Frequently Asked Questions

Q: Is the IRFR9110PBF suitable for automotive applications?
A: Yes, the IRFR9110PBF is suitable for automotive applications requiring high-speed switching and efficient power management.

Equivalent

For similar functionalities, consider these alternatives to the IRFR9110PBF:

  • IRF540PBF: An N-channel MOSFET with comparable performance characteristics, suitable for power switching applications.
  • STP55NF06L: This MOSFET offers similar specifications and is suitable for high-performance switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case DPAK-3 (TO-252-3)
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 3.1 A
Rds On - Drain-Source Resistance 1.2 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 8.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 25 W Channel Mode Enhancement
Series IRFR Brand Vishay Semiconductors
Configuration Single Height 2.38 mm
Length 6.73 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Width 6.22 mm Unit Weight 0.011640 oz

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IRFR9110PBF

P-channel MOSFET transistor IRFR9110PBF has a maximum current rating of 3.1 A and a voltage rating of 100 V, housed in a 3-pin D-PAK package

Inventory:

5,182