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IRFR4510PBF

56 A, 100 V HEXFET

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Overview of IRFR4510PBF

The IRFR4510PBF is an N-channel power MOSFET designed for high power switching applications. This MOSFET is capable of handling high current and voltage levels, making it suitable for power supply, motor control, and other high-power electronics applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • S: Source (Tab)

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IRFR4510PBF MOSFET for a more visual representation.

Key Features

  • High Voltage and Current Handling: The IRFR4510PBF MOSFET can handle high voltage and current levels, making it suitable for high-power applications.
  • Low On-Resistance: This MOSFET has low on-resistance, leading to minimal power losses and efficient operation.
  • Fast Switching Speed: The IRFR4510PBF offers fast switching speeds, enabling quick response times in power control applications.
  • Enhanced Thermal Performance: With a low thermal resistance, this MOSFET efficiently dissipates heat during operation.
  • Robust Construction: The IRFR4510PBF is built to withstand high power conditions and provide reliable performance.

Note: For detailed technical specifications, please refer to the IRFR4510PBF datasheet.

Application

  • Power Supply Units: The IRFR4510PBF is commonly used in power supply units for regulating voltage and current in electronic devices.
  • Motor Control: This MOSFET can be implemented in motor control circuits for efficient and precise control of motor speed and direction.
  • Inverters: The IRFR4510PBF is suitable for use in inverter circuits for converting DC to AC power in various applications.

Functionality

The IRFR4510PBF is a high-power N-channel MOSFET that can efficiently handle high current and voltage levels, making it ideal for power switching applications where reliability and efficiency are key requirements.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching behavior of the MOSFET.
  • Drain-Source Connection: Connect the load or power supply between the Drain and Source pins for power switching operations.
  • Heat Dissipation: Ensure proper heat sinking and thermal management to maintain the MOSFET's temperature within safe operating limits.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRFR4510PBF?
A: The IRFR4510PBF has a maximum drain-source voltage rating specified in the datasheet.

Q: Can the IRFR4510PBF be used in high-frequency switching applications?
A: The IRFR4510PBF is suitable for high-frequency switching applications, but the specific operating conditions should be considered for optimal performance.

Equivalent

For similar power switching applications, consider these alternatives to the IRFR4510PBF:

  • IRF3205: An N-channel power MOSFET with comparable specifications for high-power switching applications.
  • IRF540: This MOSFET offers similar power handling capabilities and is commonly used in power electronics.
  • IRF740: A robust N-channel MOSFET suitable for various power control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 63 A Rds On - Drain-Source Resistance 11.1 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 54 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 143 W
Channel Mode Enhancement Tradename StrongIRFET
Brand Infineon Technologies Configuration Single
Fall Time 34 ns Forward Transconductance - Min 62 S
Height 2.3 mm Length 6.5 mm
Product Type MOSFET Rise Time 42 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 42 ns Typical Turn-On Delay Time 18 ns
Width 6.22 mm Part # Aliases SP001564880
Unit Weight 0.011640 oz

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