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IRFPS40N50LPBF

Power Field-Effect Transistor with 46A I(D) and 500V

Quantity Unit Price(USD) Ext. Price
100 $4.648 $464.80
30 $5.261 $157.83
10 $5.721 $57.21
1 $6.475 $6.48

Inventory:7,969

*The price is for reference only.
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Overview of IRFPS40N50LPBF

The IRFPS40N50LPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power switching applications. This power MOSFET is part of the IRFPS series and is specifically optimized for use in power supplies, motor control, and other high current applications.

Pinout

(Please refer to the specific datasheet for precise pin configuration details.)

  • G - Gate
  • D - Drain
  • S - Source

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the IRFPS40N50LPBF MOSFET for a more visual representation.

Key Features

  • High Power Switching Capability: The IRFPS40N50LPBF is designed to handle high power loads efficiently.
  • Low On-Resistance: With low RDS(on) values, this MOSFET minimizes power loss and improves overall efficiency.
  • Fast Switching Speed: The IRFPS40N50LPBF offers rapid switching times, making it suitable for applications requiring quick response.
  • High Temperature Operating Range: This MOSFET can operate at elevated temperatures, making it ideal for demanding environments.
  • Enhanced Robustness: The IRFPS40N50LPBF is designed to withstand voltage spikes and high current levels, ensuring reliability in harsh conditions.

Note: For detailed technical specifications, please refer to the IRFPS40N50LPBF datasheet.

Applications

  • Power Supplies: The IRFPS40N50LPBF is commonly used in power supply units due to its high power handling capabilities.
  • Motor Control: This MOSFET is suitable for motor control applications, providing efficient switching for various motors.
  • High Current Circuits: The IRFPS40N50LPBF is ideal for circuits requiring high current handling, such as inverter systems and industrial equipment.

Functionality

The IRFPS40N50LPBF functions as a high-power switch, allowing for efficient control of electrical currents . It is designed to handle high power loads with low resistance and fast switching speed, making it a versatile component for various applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching behavior of the MOSFET.
  • Drain-Source Connection: Connect the load or circuit between the Drain and Source pins of the IRFPS40N50LPBF.
  • Thermal Management: Ensure proper heat dissipation to maintain the MOSFET's temperature within safe operating limits.

Frequently Asked Questions

Q: What is the maximum power handling capacity of the IRFPS40N50LPBF?
A: The IRFPS40N50LPBF can handle high power loads, but the exact capacity may vary based on operating conditions. Refer to the datasheet for detailed specifications.

Q: Is the IRFPS40N50LPBF suitable for high temperature environments?
A: Yes, the IRFPS40N50LPBF is designed to operate efficiently at elevated temperatures, making it suitable for applications in demanding environments.

Equivalent

For similar power switching applications, consider these alternatives to the IRFPS40N50LPBF:

  • IRF630: A power MOSFET with similar power handling capabilities for general purpose applications.
  • IRFP4668: This MOSFET offers high current capability and low RDS(on) for high-performance power switching.
  • IRFB4227: An efficient MOSFET for power supply and motor control applications requiring high power handling.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 46 A
Rds On - Drain-Source Resistance 100 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 380 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 450 W Channel Mode Enhancement
Series IRFPS Brand Vishay Semiconductors
Configuration Single Fall Time 69 ns
Forward Transconductance - Min 21 S Product Type MOSFET
Rise Time 170 ns Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 27 ns
Unit Weight 0.211644 oz

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IRFPS40N50LPBF

Power Field-Effect Transistor with 46A I(D) and 500V

Inventory:

7,969