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IRFPC60LCPBF

IRFPC60LCPBF - Infineon N-Channel Power MOSFET

Quantity Unit Price(USD) Ext. Price
1000 $3.627 $3,627.00
500 $3.708 $1,854.00
100 $3.889 $388.90
25 $4.281 $107.02
10 $4.667 $46.67
1 $5.319 $5.32

Inventory:7,107

*The price is for reference only.
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Overview of IRFPC60LCPBF

The IRFPC60LCPBF is a 600V N-Channel HEXFET Power MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications such as analog and digital signal switching.

Pinout

The IRFPC60LCPBF pinout refers to the configuration and function of each pin in its TO-247-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IRFPC60LCPBF has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Durable and reliable operation: The IRFPC60LCPBF is designed for long-term reliability and durability, making it suitable for demanding applications.
  • High surge current capability: This power MOSFET can handle high surge currents, ensuring stable performance even under heavy loads.
  • Low input capacitance: The IRFPC60LCPBF features low input capacitance, which reduces the risk of electromagnetic interference (EMI) and improves overall system performance.
  • Minimized electromagnetic interference: The device's design minimizes EMI emissions, ensuring a clean signal and reducing the risk of interference with other components.
  • Reduced power dissipation: The IRFPC60LCPBF is designed to minimize power dissipation, resulting in reduced heat generation and improved overall system efficiency.
  • Simplified gate drive circuitry: This power MOSFET requires simplified gate drive circuitry, reducing the complexity of the overall system design.
  • Improved noise immunity: The IRFPC60LCPBF features improved noise immunity, ensuring stable performance even in noisy environments.
  • Robustness against electrical stress: This power MOSFET is designed to withstand electrical stress, including voltage spikes and current surges.

Applications

  • Analog and digital signal switching: The IRFPC60LCPBF is suitable for analog and digital signal switching applications where high-speed and low-voltage operations are required.
  • Pulse-width modulation (PWM) control: This power MOSFET can be used in PWM control circuits to regulate the output voltage and current.
  • Power supplies and converters: The IRFPC60LCPBF is suitable for use in power supplies and converters where high-speed switching and low-voltage operations are required.
  • Solid-state relays (SSRs): This power MOSFET can be used as an SSR to control the flow of electrical current.

Equivalents

For similar functionalities, consider these alternatives to the IRFPC60LCPBF:

  • IRF640PBF: This power MOSFET offers similar performance characteristics and is suitable for analog and digital signal switching applications.
  • FQP50N60C: This power MOSFET features high-speed switching capabilities and is suitable for use in power supplies and converters.
  • STP16NF06L: This power MOSFET offers low input capacitance and is suitable for use in SSR applications.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRFPC60LCPBF?
A: The maximum voltage rating of the IRFPC60LCPBF is 600V.

Q: What is the maximum current rating of the IRFPC60LCPBF?
A: The maximum current rating of the IRFPC60LCPBF is 60A.

Q: Can the IRFPC60LCPBF be used in PWM control circuits?
A: Yes, the IRFPC60LCPBF can be used in PWM control circuits to regulate the output voltage and current.

Q: Is the IRFPC60LCPBF suitable for use in power supplies and converters?
A: Yes, the IRFPC60LCPBF is suitable for use in power supplies and converters where high-speed switching and low-voltage operations are required.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 16 A
Rds On - Drain-Source Resistance 400 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 120 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 280 W Channel Mode Enhancement
Series IRFPC Brand Vishay Semiconductors
Configuration Single Height 20.82 mm
Length 15.87 mm Product Type MOSFET
Factory Pack Quantity 500 Subcategory MOSFETs
Width 5.31 mm Unit Weight 0.211644 oz

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IRFPC60LCPBF

IRFPC60LCPBF - Infineon N-Channel Power MOSFET

Inventory:

7,107