• IRFP4668PBF TO-247AC


Power Field-Effect Transistor, 130A I(D), 200V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Quantity Unit Price(USD) Ext. Price
1 $3.715 $3.72
10 $3.270 $32.70
30 $3.006 $90.18
100 $2.739 $273.90
500 $2.189 $1,094.50
1000 $2.133 $2,133.00


*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for IRFP4668PBF or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IRFP4668PBF

The IRFP4668PBF is a power MOSFET transistor designed for high-efficiency power management applications. This MOSFET features a low ON-resistance and high switching speed, making it suitable for use in various power electronic circuits.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFP4668PBF MOSFET for a visual representation.

Key Features

  • Low ON-Resistance: The IRFP4668PBF offers a low ON-resistance, minimizing power losses and improving efficiency in power management applications.
  • High Switching Speed: With its high switching speed, this MOSFET enables fast and responsive switching in power electronic circuits.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring reliable operation under high load conditions.
  • Robust Construction: Constructed with high-quality materials, the IRFP4668PBF offers durability and longevity in demanding environments.

Note: For detailed technical specifications, please refer to the IRFP4668PBF datasheet.


  • Switching Power Supplies: Ideal for use in switching power supplies for efficient power conversion.
  • Motor Control: Suitable for motor control applications requiring high-speed switching and low ON-resistance.
  • Power Inverters: Used in power inverter circuits for converting DC power to AC power in various electronic systems.


The IRFP4668PBF MOSFET transistor is designed to facilitate efficient power management in a variety of electronic applications. It offers low ON-resistance and high switching speed, ensuring optimal performance in power electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load between the drain and source terminals of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking to maintain optimal operating temperature and reliability.

Frequently Asked Questions

Q: What is the maximum operating voltage for the IRFP4668PBF?
A: The IRFP4668PBF can handle maximum voltages within its specified ratings. Please consult the datasheet for precise details regarding voltage ratings.

Q: Is the IRFP4668PBF suitable for high-frequency applications?
A: While the IRFP4668PBF offers high switching speeds, its suitability for high-frequency applications depends on various factors such as circuit design and operating conditions. Consult the datasheet and consider application requirements for optimal performance.


For similar functionalities, consider these alternatives to the IRFP4668PBF:

  • IRFP4668: This is a similar power MOSFET transistor offering comparable performance characteristics to the IRFP4668PBF.
  • IRFP4668PBF-ND: This is a variant of the IRFP4668PBF with potential differences in packaging or specifications.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRFP4668PBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 760 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (Abs) (ID) 130 A
Drain Current-Max (ID) 130 A Drain-source On Resistance-Max 0.0097 Ω
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W Pulsed Drain Current-Max (IDM) 520 A
Qualification Status Not Qualified Surface Mount NO
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.