• IRFP4668PBF TO-247AC
IRFP4668PBF TO-247AC

IRFP4668PBF

Power Field-Effect Transistor, 130A I(D), 200V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Quantity Unit Price(USD) Ext. Price
1 $3.715 $3.72
10 $3.270 $32.70
30 $3.006 $90.18
100 $2.739 $273.90
500 $2.189 $1,094.50
1000 $2.133 $2,133.00

Inventory:4,070

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Overview of IRFP4668PBF

The IRFP4668PBF is a power MOSFET transistor designed for high-efficiency power management applications. This MOSFET features a low ON-resistance and high switching speed, making it suitable for use in various power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFP4668PBF MOSFET for a visual representation.

Key Features

  • Low ON-Resistance: The IRFP4668PBF offers a low ON-resistance, minimizing power losses and improving efficiency in power management applications.
  • High Switching Speed: With its high switching speed, this MOSFET enables fast and responsive switching in power electronic circuits.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring reliable operation under high load conditions.
  • Robust Construction: Constructed with high-quality materials, the IRFP4668PBF offers durability and longevity in demanding environments.

Note: For detailed technical specifications, please refer to the IRFP4668PBF datasheet.

Application

  • Switching Power Supplies: Ideal for use in switching power supplies for efficient power conversion.
  • Motor Control: Suitable for motor control applications requiring high-speed switching and low ON-resistance.
  • Power Inverters: Used in power inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The IRFP4668PBF MOSFET transistor is designed to facilitate efficient power management in a variety of electronic applications. It offers low ON-resistance and high switching speed, ensuring optimal performance in power electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load between the drain and source terminals of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking to maintain optimal operating temperature and reliability.

Frequently Asked Questions

Q: What is the maximum operating voltage for the IRFP4668PBF?
A: The IRFP4668PBF can handle maximum voltages within its specified ratings. Please consult the datasheet for precise details regarding voltage ratings.

Q: Is the IRFP4668PBF suitable for high-frequency applications?
A: While the IRFP4668PBF offers high switching speeds, its suitability for high-frequency applications depends on various factors such as circuit design and operating conditions. Consult the datasheet and consider application requirements for optimal performance.

Equivalent

For similar functionalities, consider these alternatives to the IRFP4668PBF:

  • IRFP4668: This is a similar power MOSFET transistor offering comparable performance characteristics to the IRFP4668PBF.
  • IRFP4668PBF-ND: This is a variant of the IRFP4668PBF with potential differences in packaging or specifications.

IRFP4668PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRFP4668PBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 760 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (Abs) (ID) 130 A
Drain Current-Max (ID) 130 A Drain-source On Resistance-Max 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W Pulsed Drain Current-Max (IDM) 520 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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