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IRFP31N50LPBF

500V 31A MOSFET with 180mΩ resistance at 19A and 10V

Quantity Unit Price(USD) Ext. Price
1 $3.731 $3.73
10 $3.256 $32.56
25 $2.735 $68.38
100 $2.449 $244.90
500 $2.318 $1,159.00
1000 $2.257 $2,257.00

Inventory:6,936

*The price is for reference only.
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Overview of IRFP31N50LPBF

The IRFP31N50LPBF is a power MOSFET featuring a 500V voltage rating and a continuous drain current of 31A. This MOSFET is designed for high-power applications and offers low on-state resistance and fast switching performance, making it suitable for power supply, motor control, and other high-current switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFP31N50LPBF MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a 500V rating, the IRFP31N50LPBF is suitable for high-voltage applications.
  • High Current Capability: Capable of handling continuous drain currents of up to 31A, enabling high-power operation.
  • Low On-Resistance: The MOSFET offers low on-state resistance, minimizing power dissipation and improving efficiency.
  • Fast Switching: Features fast switching characteristics, suitable for high-frequency switching applications.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation, ensuring reliable operation under high-power conditions.

Note: For detailed technical specifications, please refer to the IRFP31N50LPBF datasheet.

Application

  • Power Supplies: Ideal for use in high-power voltage regulation and power supply applications.
  • Motor Control: Suitable for motor drive and control circuits requiring high current handling capabilities.
  • Switching Circuits: Used in high-current switching applications such as inverters and converters.

Functionality

The IRFP31N50LPBF is a power MOSFET designed to handle high voltages and currents with low on-resistance and fast switching characteristics. It provides efficient and reliable performance in high-power applications.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching behavior of the MOSFET.
  • Drain-Source Connections: Connect the load or circuit being controlled to the drain and source terminals.
  • Thermal Considerations: Ensure proper heat sinking and thermal management for high-power operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRFP31N50LPBF?
A: The IRFP31N50LPBF has a maximum voltage rating of 500V, making it suitable for high-voltage applications.

Q: Can the IRFP31N50LPBF be used for high-frequency switching applications?
A: Yes, the IRFP31N50LPBF features fast switching characteristics that make it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRFP31N50LPBF:

  • IRFP460: A power MOSFET with similar voltage and current ratings, suitable for high-power applications.
  • IRFB4110: This MOSFET offers comparable performance and is suitable for high-current and high-voltage applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247AC-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 31 A
Rds On - Drain-Source Resistance 180 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 210 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 460 W Channel Mode Enhancement
Series IRFP Brand Vishay Semiconductors
Configuration Single Fall Time 53 ns
Forward Transconductance - Min 15 S Height 20.82 mm
Length 15.87 mm Product Type MOSFET
Rise Time 115 ns Factory Pack Quantity 500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 54 ns Typical Turn-On Delay Time 28 ns
Width 5.31 mm Unit Weight 0.211644 oz

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IRFP31N50LPBF

500V 31A MOSFET with 180mΩ resistance at 19A and 10V

Inventory:

6,936