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IRFIB6N60APBF

N-MOSFET transistor with unipolar functionality, rated at 600 volts, capable of handling currents up to 3

Inventory:7,397

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Overview of IRFIB6N60APBF

The IRFIB6N60APBF is a power MOSFET transistor designed for high-power switching applications in various electronic circuits. It features a low on-state resistance and high current capability, making it suitable for use in power supplies, motor control, and other applications requiring efficient power management.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFIB6N60APBF MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRFIB6N60APBF can handle high power levels, making it suitable for demanding applications.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power loss and improves efficiency in power circuits.
  • Fast Switching Speed: The IRFIB6N60APBF offers fast switching characteristics, enabling rapid response in switching applications.
  • High Current Capability: This MOSFET can handle high continuous and pulsed currents, making it ideal for power delivery.
  • Temperature Stability: Designed to operate reliably over a wide temperature range for consistent performance.

Note: For detailed technical specifications, please refer to the IRFIB6N60APBF datasheet.

Application

  • Power Supplies: Suitable for use in power supply circuits for efficient power management.
  • Motor Control: Ideal for motor control applications in robotics, automation, and industrial systems.
  • Inverters: Used in inverter circuits for converting DC power to AC power in various applications.

Functionality

The IRFIB6N60APBF MOSFET transistor is designed to efficiently switch high-power loads in electronic circuits, providing reliable power control and management.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the MOSFET.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins to the load circuit for power delivery.

Frequently Asked Questions

Q: Is the IRFIB6N60APBF suitable for high-frequency switching applications?
A: Yes, the IRFIB6N60APBF offers fast switching speeds and is suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRFIB6N60APBF:

  • IRF1405: A power MOSFET with similar high-power handling capabilities and low on-state resistance.
  • IRF3205: This MOSFET offers high current capability and fast switching speeds for efficient power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 5.5 A
Rds On - Drain-Source Resistance 750 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 49 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 60 W Channel Mode Enhancement
Series IRFIB Brand Vishay Semiconductors
Configuration Single Height 15.49 mm
Length 10.41 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Width 4.7 mm Unit Weight 0.068784 oz

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IRFIB6N60APBF

N-MOSFET transistor with unipolar functionality, rated at 600 volts, capable of handling currents up to 3

Inventory:

7,397