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IRFD014PBF

Vishay IRFD014PBF N-channel MOSFET Transistor, 1.7 A, 60 V, 4-pin HVMDIP, HexDIP

Quantity Unit Price(USD) Ext. Price
1 $0.614 $0.61
10 $0.500 $5.00
30 $0.443 $13.29
100 $0.388 $38.80
500 $0.354 $177.00
1000 $0.338 $338.00

Inventory:3,791

*The price is for reference only.
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Overview of IRFD014PBF

The IRFD014PBF is a power MOSFET transistor designed for switching applications in various electronic circuits. It features a low on-state resistance and high-speed switching capabilities, making it suitable for power management and voltage regulation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFD014PBF MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRFD014PBF offers low RDS(on) for efficient power switching.
  • High-Speed Switching: This MOSFET provides fast switching speeds for responsive performance in circuits.
  • Enhanced Power Management: Suitable for power control and voltage regulation applications.
  • Robust Construction: Built to withstand high voltage and current levels for reliable operation.

Note: For detailed technical specifications, please refer to the IRFD014PBF datasheet.

Application

  • Power Switching Circuits: Ideal for use in power switching applications and motor control circuits.
  • Voltage Regulators: Suitable for implementing voltage regulation functions in various electronic devices.
  • Inverter Circuits: Commonly used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The IRFD014PBF MOSFET is designed to control the flow of power in electronic circuits with its low resistance and high-speed switching capabilities. It offers reliable performance in power management and control applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the controlling signal or driver circuit.
  • Drain Connection: Connect the drain (D) pin to the load or power output.
  • Source Connection: Connect the source (S) pin to the ground reference or common connection.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRFD014PBF?
A: The IRFD014PBF can handle a maximum voltage of X volts.

Q: Is the IRFD014PBF suitable for high-current applications?
A: Yes, the IRFD014PBF is designed to handle high currents with its robust construction.

Equivalent

For similar functionalities, consider these alternatives to the IRFD014PBF:

  • IRF540PBF: A power MOSFET with comparable performance characteristics to the IRFD014PBF.
  • IRLZ44NPBF: This MOSFET offers similar switching capabilities and reliability for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case DIP-4 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 1.7 A Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 11 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 1.3 W
Channel Mode Enhancement Series IRFD
Brand Vishay / Siliconix Configuration Single
Height 3.37 mm Length 6.29 mm
Product Type MOSFET Factory Pack Quantity 2500
Subcategory MOSFETs Width 5 mm
Unit Weight 0.031537 oz

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IRFD014PBF

Vishay IRFD014PBF N-channel MOSFET Transistor, 1.7 A, 60 V, 4-pin HVMDIP, HexDIP

Inventory:

3,791