• IRFB7534PBF TO-220AB
IRFB7534PBF TO-220AB

IRFB7534PBF

Detailed Specs: 100A continuous current capability, with a power dissipation of 294W at 3.7V and 250uA

Quantity Unit Price(USD) Ext. Price
1000 $0.425 $425.00
500 $0.436 $218.00
100 $0.457 $45.70
50 $0.493 $24.65
10 $0.696 $6.96
1 $0.768 $0.77

Inventory:7,840

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IRFB7534PBF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRFB7534PBF

The IRFB7534PBF is a N-Channel Power MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The IRFB7534PBF pinout refers to the configuration and function of each pin in its TO-220AB-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IRFB7534PBF has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-Channel Power MOSFET: The IRFB7534PBF is a high-performance N-channel power MOSFET designed for low-voltage and high-speed applications.
  • 60V Rating: The device has a voltage rating of 60V, making it suitable for use in a wide range of applications.
  • 195A Current Handling: The IRFB7534PBF is capable of handling up to 195A of current, providing reliable performance even under heavy loads.

Applications

  • Digitally-Controlled Power Supplies: The IRFB7534PBF can be used in digitally-controlled power supplies to regulate voltage and current precisely.
  • Semiconductor Testing Equipment: Its high-speed operation makes it suitable for use in semiconductor testing equipment, where precise control is essential.
  • Industrial Control Systems: The device's low-voltage rating and high-current handling capabilities make it a good fit for industrial control systems that require precise switching and controlling of high-power devices.

Advantages and Disadvantages

Advantages

  • High-Speed Operation: The IRFB7534PBF excels in high-speed applications where rapid switching is required.
  • Low-Voltage Rating: Its low-voltage rating makes it suitable for use in a wide range of applications where voltage regulation is critical.

Disadvantages

  • Limited Dynamic Range: The device's limited dynamic range (the difference between its maximum and minimum operating power) may be a limitation in certain applications.

Equivalents

For similar functionalities, consider these alternatives to the IRFB7534PBF:

  • BVx43L-N04SPB: The BVx43L-N04SPB is another high-performance N-channel power MOSFET that can be used as a substitute for the IRFB7534PBF.
  • STW45NF60T: The STW45NF60T is a 600V rated N-channel power MOSFET that shares similar characteristics with the IRFB7534PBF and can be used in applications where the voltage rating is higher than what's required.

Frequently Asked Questions

Q: What type of package does the IRFB7534PBF come in?
A: The IRFB7534PBF comes in a TO-220AB-3 package.

Q: Can this device handle high-speed switching operations?
A: Yes, the IRFB7534PBF is designed for high-speed operation and can switch rapidly to ensure reliable performance in demanding applications.

IRFB7534PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRFB7534PBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 775 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 195 A
Drain Current-Max (ID) 195 A Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 294 W
Pulsed Drain Current-Max (IDM) 944 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

packageimg

IRFB7534PBF

Detailed Specs: 100A continuous current capability, with a power dissipation of 294W at 3.7V and 250uA

Inventory:

7,840