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IRFB4137PBF

The IRFB4137PBF is a power MOSFET featuring N-channel conductivity, rated for voltages up to 300V and currents up to 38A

Inventory:9,737

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Overview of IRFB4137PBF

The IRFB4137PBF is a power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high switching speed, making it ideal for use in power supplies, motor control, and other power management systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for control
  • DRAIN: Drain terminal for power connection
  • SOURCE: Source terminal for ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFB4137PBF transistor for a visual representation.

Key Features

  • High Power Handling: Capable of handling high power levels, suitable for power electronics applications.
  • Low On-State Resistance: Reduces power loss and heat generation during switching operations.
  • Fast Switching Speed: Provides rapid switching for efficient power control.
  • Robust Construction: Designed for reliability and durability in demanding environments.
  • Enhanced Thermal Performance: Features thermal efficiency to dissipate heat effectively.

Note: For detailed technical specifications, please refer to the IRFB4137PBF datasheet.

Application

  • Power Supplies: Suitable for use in power supply units for efficient power regulation.
  • Motor Control: Ideal for motor control applications requiring high-power switching.
  • Power Management Systems: Used in various power management systems for optimized performance.

Functionality

The IRFB4137PBF is a power MOSFET transistor that offers high-performance switching capabilities, enabling efficient power control in a wide range of applications.

Usage Guide

  • GATE Terminal: Connect the GATE terminal to the control signal for switching operations.
  • DRAIN Terminal: Connect the DRAIN terminal to the power source for power flow.
  • SOURCE Terminal: Connect the SOURCE terminal to the ground reference for the circuit.

Frequently Asked Questions

Q: Is the IRFB4137PBF suitable for high-frequency switching applications?
A: Yes, the IRFB4137PBF offers fast switching speed, making it suitable for high-frequency switching operations.

Equivalent

For similar functionalities, consider these alternatives to the IRFB4137PBF:

  • IRF540N: A power MOSFET transistor with comparable performance characteristics.
  • IRF3205: Another power MOSFET transistor suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TUBE addProductInfo Trench Mosfet - TO-220
packageNameMarketing TO220 msl NA
halogenFree yes customerInfo STANDARD
fgr A7D productClassification COM
productStatusInfo not for new design hfgr A
packageName TO220 pbFree yes
moistureProtPack NON DRY orderingCode SP001554580
fourBlockPackageName PG-TO220-3-904 rohsCompliant yes
opn IRFB4137PBF completelyPbFree yes
sapMatnrSali SP001554580

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IRFB4137PBF

The IRFB4137PBF is a power MOSFET featuring N-channel conductivity, rated for voltages up to 300V and currents up to 38A

Inventory:

9,737