• IRFB18N50KPBF
IRFB18N50KPBF

IRFB18N50KPBF

TO-220 package MOSFET with 220W power dissipation capability

Quantity Unit Price(USD) Ext. Price
1000 $4.778 $4,778.00
500 $4.948 $2,474.00
100 $5.326 $532.60
50 $6.177 $308.85
10 $6.929 $69.29
1 $8.299 $8.30

Inventory:7,965

*The price is for reference only.
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Submit your quote request for IRFB18N50KPBF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRFB18N50KPBF

The IRFB18N50KPBF is a power MOSFET transistor designed for high-performance applications requiring high power handling capabilities and low on-state resistance. This MOSFET is ideal for use in power supply circuits, motor control, and other high-power switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • DRAIN: Power output terminal
  • SOURCE: Ground terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFB18N50KPBF MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRFB18N50KPBF can handle high power levels, making it suitable for demanding applications.
  • Low On-State Resistance: This MOSFET features low on-state resistance for efficient power transfer and reduced heat dissipation.
  • Fast Switching Speed: With a fast switching speed, this MOSFET enables quick response times in switching applications.
  • High Voltage Rating: The IRFB18N50KPBF has a high voltage rating, allowing it to withstand high voltage levels.
  • Temperature Resilience: Designed to operate in a wide temperature range, ensuring reliability in various environments.

Note: For detailed technical specifications, please refer to the IRFB18N50KPBF datasheet.

Application

  • Power Supply Circuits: Ideal for use in power supply circuits to regulate and control power flow.
  • Motor Control: Suitable for motor control applications requiring high-power switching capabilities.
  • Inverter Systems: Used in inverter systems for converting DC power to AC power efficiently.

Functionality

The IRFB18N50KPBF MOSFET is designed to efficiently switch high power loads in a variety of applications, providing reliable power control and performance.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE pin to control the switching of the MOSFET.
  • Power Connections: Connect the DRAIN terminal to the power output and the SOURCE terminal to the ground.
  • Heat Management: Ensure proper heat sinking for optimal thermal performance during high-power operations.

Frequently Asked Questions

Q: Is the IRFB18N50KPBF suitable for automotive applications?
A: Yes, the IRFB18N50KPBF can be used in automotive applications, provided it meets the necessary specifications and requirements.

Equivalent

For similar functionalities, consider these alternatives to the IRFB18N50KPBF:

  • IRFB18N50: This is a similar MOSFET from the same series with slightly different specifications or package options.
  • IRF3205: An alternative power MOSFET with comparable performance characteristics to the IRFB18N50KPBF.

IRFB18N50KPBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 290 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 120 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 200 W Channel Mode Enhancement
Series IRFB Brand Vishay Semiconductors
Configuration Single Fall Time 30 ns
Forward Transconductance - Min 6.4 S Height 15.49 mm
Length 10.41 mm Product Type MOSFET
Rise Time 60 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 22 ns
Width 4.7 mm Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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IRFB18N50KPBF

TO-220 package MOSFET with 220W power dissipation capability

Inventory:

7,965
Overview of IRFB18N50KPBF Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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