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IRF9Z24PBF

MOSFET P-CH -60V HEXFET MOSFET

Inventory:9,859

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Overview of IRF9Z24PBF

The IRF9Z24PBF is a power MOSFET transistor designed for high-current switching applications.It features a low on-state resistance and fast switching characteristics,making it ideal for power supply, motor control, and other high-power applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF9Z24PBF MOSFET for a visual representation.

Key Features

  • High Current Capability:The IRF9Z24PBF can handle high current loads, making it suitable for power applications.
  • Low On-Resistance:With its low on-state resistance, this MOSFET minimizes power loss and heat generation.
  • Fast Switching Speed:This transistor offers fast switching speeds, enabling efficient control of high-power circuits.
  • Enhanced Thermal Performance:The IRF9Z24PBF is designed for enhanced thermal dissipation, ensuring reliable operation under high loads.
  • High Voltage Rating:This MOSFET has a high voltage rating, allowing it to be used in a variety of high-voltage applications.

Note:For detailed technical specifications, please refer to the IRF9Z24PBF datasheet.

Application

  • Power Supplies:The IRF9Z24PBF is commonly used in power supply circuits for efficient power management.
  • Motor Control:Suitable for controlling high-power motors and actuators in industrial applications.
  • Inverters:Utilized in inverter circuits for converting DC power to AC power in various systems.

Functionality

The IRF9Z24PBF is a high-current MOSFET transistor designed for power switching applications.It provides efficient switching and robust performance in high-power circuits.

Usage Guide

  • Gate Control:Apply appropriate voltage levels to the gate pin to control the switching behavior of the MOSFET.
  • Load Connection:Connect the load to the drain pin while ensuring proper heat sinking for thermal management.
  • Source Connection:Connect the source pin to the ground reference of the circuit.

Frequently Asked Questions

Q:Can the IRF9Z24PBF be used in high-frequency switching applications?
A:Yes, the IRF9Z24PBF features fast switching characteristics suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF9Z24PBF:

  • IRFZ44N:A popular power MOSFET transistor with similar current and voltage ratings for high-power switching applications.
  • IRF3205:This MOSFET offers comparable performance to the IRF9Z24PBF with slight variations in specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 11 A
Rds On - Drain-Source Resistance 280 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 19 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Series IRF9Z Brand Vishay Semiconductors
Configuration Single Fall Time 29 ns
Product Type MOSFET Rise Time 68 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 13 ns Part # Aliases IRF9Z24PBF-BE3
Unit Weight 0.068784 oz

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packageimg

IRF9Z24PBF

MOSFET P-CH -60V HEXFET MOSFET

Inventory:

9,859