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IRF9511

IRF9511: Si Power MOSFET, 80V, 3A, 1.2Ω, P-Channel

Inventory:7,814

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Overview of IRF9511

The IRF9511 is a dual power MOSFET driver IC designed for high-speed, high-current gate drive applications in power electronics. It features independent high and low side gate driver outputs, making it suitable for driving both high-side and low-side MOSFETs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: High-side floating supply voltage
  • VB: Bootstrap supply for high-side gate driver
  • GH: High-side gate driver output
  • GL: Low-side gate driver output
  • VSS: Ground
  • SD: Shutdown pin
  • COM: Logic ground
  • HO: High-side MOSFET output
  • LO: Low-side MOSFET output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF9511 IC for a visual representation.

Key Features

  • Dual Power MOSFET Driver: Provides independent high and low side gate driver outputs for efficient power switching.
  • High-Speed Operation: Suitable for high-speed switching applications in power electronics.
  • High Current Drive: Capable of driving high-current MOSFETs for power delivery applications.
  • Bootstrap Supply: Includes a bootstrap supply for the high-side gate driver to ensure proper gate voltage levels.
  • Shutdown Function: Features a shutdown pin for convenient control over device operation.

Note: For detailed technical specifications, please refer to the IRF9511 datasheet.

Application

  • Power Electronics: Ideal for high-speed switching applications in power supplies, motor control, and inverters.
  • Motor Drives: Suitable for driving MOSFETs in motor drive applications requiring high current switching.
  • Power Inverters: Used in power inverter circuits for efficient power conversion and control.

Functionality

The IRF9511 is a dual power MOSFET driver IC that provides efficient gate driving for high-speed, high-current applications. It ensures precise control over power switching operations in power electronics systems.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) to the high-side floating supply voltage and VSS (Pin 5) to ground.
  • Gate Drive: Use GH (Pin 3) for the high-side gate driver output and GL (Pin 4) for the low-side gate driver output.
  • Bootstrap Supply: Connect VB (Pin 2) to the bootstrap supply for proper high-side gate driver operation.

Frequently Asked Questions

Q: What is the maximum current rating of the IRF9511?
A: The IRF9511 is capable of driving MOSFETs with high current ratings, making it suitable for power delivery applications.

Q: How does the shutdown function work in the IRF9511?
A: The shutdown pin (SD) can be used to disable the gate driver outputs, providing a convenient way to control the device's operation.

Equivalent

For similar functionalities, consider these alternatives to the IRF9511:

  • IR21844: Dual MOSFET driver IC with similar high-speed and high-current capabilities.
  • HIP2100: High-speed MOSFET driver offering comparable performance in power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain Source Voltage (Vdss) 80V Continuous Drain Current (Id) 3A
Drain Source On Resistance (RDS(on)@Vgs,Id) 1.2Ω@1.5A,10V Power Dissipation (Pd) 20W
Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA Type P Channel
Input Capacitance (Ciss@Vds) 180pF@25V Total Gate Charge (Qg@Vgs) 11nC@10V
Operating Temperature -55℃~+150℃@(Tj)

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IRF9511

IRF9511: Si Power MOSFET, 80V, 3A, 1.2Ω, P-Channel

Inventory:

7,814