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IRF9389PBF

MOSFET Trench MOSFET Package

Inventory:7,821

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Overview of IRF9389PBF

The IRF9389PBF is a power MOSFET transistor designed for high power switching applications. This N-channel MOSFET features a low on-resistance and high current capability, making it suitable for power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • DRAIN: Output terminal for the high-power signal
  • SOURCE: Connection to the ground reference
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF9389PBF MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRF9389PBF can handle high power levels, making it suitable for power electronics applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET offers efficient power switching performance.
  • Fast Switching Speed: The fast switching speed of the IRF9389PBF allows for rapid power control in circuits.
  • High Current Capability: This MOSFET can handle high currents, enabling it to support demanding load conditions.
  • Robust Construction: The IRF9389PBF is built to withstand high voltage and current stresses for reliable operation.

Note: For detailed technical specifications, please refer to the IRF9389PBF datasheet.

Application

  • Power Management: Ideal for power switching and control applications in power supplies, motor control, and inverters.
  • Electronic Circuits: Used in various electronic circuits requiring high-power switching capabilities.
  • Voltage Regulator: Suitable for use in voltage regulator circuits for efficient power management.

Functionality

The IRF9389PBF power MOSFET transistor is designed to provide effective power switching and control in electronic circuits. It offers high current handling and low on-resistance for efficient power management.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE pin for controlling the MOSFET switching.
  • Load Connection: Connect the DRAIN pin to the load that requires power switching.
  • Ground Connection: Ensure proper connection of the SOURCE pin to the ground reference.

Equivalent

For similar functionalities, consider these alternatives to the IRF9389PBF:

  • IRF3205: A high-power N-channel MOSFET with comparable performance characteristics to the IRF9389PBF.
  • IRF540: This MOSFET offers similar power handling capabilities and is commonly used in high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6.8 A, 4.6 A Rds On - Drain-Source Resistance 40 mOhms, 103 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.3 V
Qg - Gate Charge 6.8 nC, 8.1 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Dual Fall Time 3.9 ns, 15 ns
Forward Transconductance - Min 8.2 S, 4.1 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 4.8 ns, 14 ns Factory Pack Quantity 95
Subcategory MOSFETs Typical Turn-Off Delay Time 4.9 ns, 17 ns
Typical Turn-On Delay Time 5.1 ns, 8 ns Width 3.9 mm
Part # Aliases SP001555848 Unit Weight 0.019048 oz

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packageimg

IRF9389PBF

MOSFET Trench MOSFET Package

Inventory:

7,821