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IRF9362PBF

362PBF Dual P-channel MOSFET

Inventory:6,676

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Overview of IRF9362PBF

The IRF9362BF is an N-Channel Power MOSFET designed for high power switching applications. This MOSFET is suitable for use in a wide of power electronics and industrial applications due to its high current capacity and low on-state resistancep>

Pinout

(Note: The pin configuration below is a general representation. Refer to specific datasheet for precise details.)

  • G: Gate (control terminal)
  • <>D: Drain (power output)
  • S: Source (ground reference)

Key Features

  • High Current Capacity: The IRF9362PBF can handle high current levels, making it suitable for power electronic applications.
  • Low On-State Resistance: The MOSFET offers low on-state resistance, resulting in reduced power dissipation and improved efficiency.
  • Fast Switching Speeds: This MOSFET provides fast switching characteristics, allowing for rapid control of power circuits.

Application

  • Power Supplies:The IRF9362PBF can be used in power supply circuits for efficient switching and regulation of electrical power.Motor Control:The MOSFET is suitable for motor control applications where high current handling capability is required. Signal Inverters:The device can be utilized in signal inverters and ampl due to its fast switching speeds. Battery Management Systems:This MOSFET is applicable in battery management systems control the charging/discharging of batteries efficiently. Note:Please consult the IRF9362PBF datasheet or manufacturer's documentation for detailed technical specifications, application guidelines, and other relevant information. Equivelant For similar functionalities, consider these alternatives to the IRF9362PBF: IRFS7730: This N-Channel Power MOSFT offers comparable performance characteristics to the IRFS7730 with a slightly different pinout configuration. IRFB4110: An alternative N-Channel Power MOSFT that provides similar capabilities with improvements in certain parameters compared to the 74LS08. IRFP460A: The IRFP460 offers similar functionality as the irf 9361 PBM with some differences based operating parameters such as voltage ratings etc. Please note that while these alternatives offer similar functionalities, you should refer to respective datasheets or product documentation for precise details before selecting a replacement component.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 17 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 13 nC
Pd - Power Dissipation 2 W Brand Infineon Technologies
Configuration Dual Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Factory Pack Quantity 95 Subcategory MOSFETs
Transistor Type 2 P-Channel Width 3.9 mm
Part # Aliases SP001566534 Unit Weight 0.019048 oz

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IRF9362PBF

362PBF Dual P-channel MOSFET

Inventory:

6,676