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In Stock:5,650
IRF7831TRPBF is a high-quality Single FETs, MOSFETs from Infineon Technologies
Part Number : IRF7831TRPBF
Package/Case : 8-SOIC
Manufacturer : Infineon Technologies
Components Classification : Single FETs, MOSFETs
DataSheet : IRF7831TRPBF DataSheet (PDF)
Series : IRF7831
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | HEXFET® | Product Status | Not For New Designs |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Vgs (Max) | ±12V | Input Capacitance (Ciss) (Max) @ Vds | 6240 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | Base Product Number | IRF7831 |
The IRF7831TRPBF is a Dual N-Channel MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.
The IRF7831TRPBF pinout refers to the configuration and function of each pin in its SOIC-8 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IRF7831TRPBF has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.
The IRF7831TRPBF has several advantages, including its high-speed and low-voltage operations, compact and efficient design, RoHS compliance, and halogen-free construction. However, it also has some disadvantages, such as its limited current handling capacity and relatively high on-resistance (RDS(on)).
The IRF7831TRPBF is equivalent to other dual N-channel MOSFETs that have similar specifications and characteristics. Some examples of equivalent components include the STP16NF50, the NXP BSS84, and the ON Semiconductor NTMFSH05L.
Q: What is the maximum drain current of the IRF7831TRPBF?
A: The maximum drain current of the IRF7831TRPBF is 8A.
Q: What is the maximum gate-source voltage (VGS) of the IRF7831TRPBF?
A: The maximum gate-source voltage (VGS) of the IRF7831TRPBF is 20V.
Q: What is the on-resistance (RDS(on)) of the IRF7831TRPBF at VGS = 10V?
A: The on-resistance (RDS(on)) of the IRF7831TRPBF at VGS = 10V is 3.7mΩ.
Q: Is the IRF7831TRPBF RoHS compliant?
A: Yes, the IRF7831TRPBF is RoHS compliant.
Q: Is the IRF7831TRPBF halogen-free?
A: Yes, the IRF7831TRPBF is halogen-free.
Warranty, Returns, and Additional Information
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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