• IRF7306PBF SOIC-8
IRF7306PBF SOIC-8

IRF7306PBF

N-Channel HEXFET MOSFET with 20V rating, dual configuration, and 100mOhms channel resistance

Quantity Unit Price(USD) Ext. Price
1 $2.948 $2.95
200 $1.176 $235.20
500 $1.137 $568.50
1000 $1.117 $1,117.00

Inventory:5,879

*The price is for reference only.
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Overview of IRF7306PBF

The IRF7306PBF is a dual P-channel power MOSFET IC designed for power management applications. It features two P-channel MOSFETs in a single package, offering efficient power switching capabilities.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • GATE2: Gate terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • DRAIN2: Drain terminal for MOSFET 2
  • VD: Power supply voltage
  • VG: Gate voltage
  • COM: Common connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF7306PBF IC for a visual representation.

Key Features

  • Dual P-Channel MOSFETs: Offers two P-channel MOSFETs for power switching applications.
  • High Power Handling Capacity: Capable of handling high power levels efficiently.
  • Low On-Resistance: Provides low on-resistance for minimal power loss during switching.
  • Fast Switching Speed: Ensures quick response times in power management systems.
  • Compact Package: Available in a space-saving package for easy integration.

Note: For detailed technical specifications, please refer to the IRF7306PBF datasheet.

Application

  • Power Management: Ideal for power switching and management applications in various electronic systems.
  • Motor Control: Suitable for motor control circuits requiring efficient power switching.
  • Voltage Regulation: Used in voltage regulation circuits for stable power delivery.

Functionality

The IRF7306PBF integrates dual P-channel MOSFETs for effective power switching and control, making it a versatile component in power management circuits.

Usage Guide

  • Power Supply: Connect the VD pin to the power supply voltage.
  • Gate Control: Apply appropriate gate voltages to GATE1 and GATE2 for controlling the MOSFETs.
  • Load Connection: Connect the load between DRAIN1 and SOURCE1, and DRAIN2 and SOURCE2 for power switching.

Frequently Asked Questions

Q: What is the maximum power handling capability of the IRF7306PBF?
A: The IRF7306PBF has a high power handling capacity suitable for various power management applications.

Q: Is the IRF7306PBF compatible with motor control applications?
A: Yes, the IRF7306PBF is well-suited for motor control circuits requiring efficient power switching capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IRF7306PBF:

  • IRF7319: A dual P-channel power MOSFET IC with comparable performance characteristics.
  • AUIRF7306: This is another dual P-channel MOSFET IC offering similar power switching capabilities.

IRF7306PBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3.6 A Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 16.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Dual
Fall Time 18 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 17 ns Factory Pack Quantity 3800
Subcategory MOSFETs Transistor Type 2 P-Channel
Type Power MOSFET Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 11 ns Width 3.9 mm
Part # Aliases SP001564984 Unit Weight 0.019048 oz

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