• IRF7306PBF 8-SO
IRF7306PBF 8-SO

IRF7306PBF

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Inventory:5,879

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Overview of IRF7306PBF

DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.● Generation V Technology● Ultra Low On-Resistance● Dual P-Channel Mosfet● Surface Mount● Available in Tape & Reel● Dynamic dv/dt Rating● Fast Switching● Lead-Free

IRF7306PBF

Key Features

LOGIC LEVEL COMPATIBLE

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRF7306PBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 3 A
Drain Current-Max (ID) 3.6 A Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 2
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 14 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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