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IRF7204PBF

IRF7204PBF MOSFET: P Channel Device capable of Handling 20V and 5

Quantity Unit Price(USD) Ext. Price
1 $0.215 $0.22
200 $0.083 $16.60
500 $0.080 $40.00
1000 $0.079 $79.00

Inventory:7,098

*The price is for reference only.
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Overview of IRF7204PBF

The IRF7204PBF is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) power module designed for high-frequency power conversion applications. It features a compact and efficient design, making it ideal for use in switching power supplies, motor control, and DC-DC converters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate of MOSFET 1
  • S: Source of MOSFET 1
  • D: Drain of MOSFET 1
  • G: Gate of MOSFET 2
  • S: Source of MOSFET 2
  • D: Drain of MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF7204PBF MOSFET module for a better understanding of its usage.

Key Features

  • Dual N-Channel MOSFET: Integrates two N-channel MOSFETs in a single module for enhanced power management.
  • High-Frequency Operation: Suitable for high-frequency applications requiring efficient power conversion.
  • Compact Design: The module's compact design allows for space-saving integration into electronic circuits.
  • Low ON-Resistance: Features low ON-resistance for minimal power losses during switching operations.
  • High Switching Speed: Provides fast switching speeds, enabling rapid power control in various applications.

Note: For detailed technical specifications, please refer to the IRF7204PBF datasheet.

Application

  • Power Supplies: Ideal for use in switching power supplies for efficient voltage regulation.
  • Motor Control: Suitable for motor control applications requiring high-frequency operation.
  • DC-DC Converters: Used in DC-DC converter circuits for converting and regulating DC voltage levels.

Functionality

The IRF7204PBF dual MOSFET module facilitates power conversion and control in high-frequency applications by utilizing its dual N-channel MOSFET configuration. It offers efficient power management and reliable performance for various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate terminals for switching operations.
  • Load Connection: Connect the source and drain terminals to the respective parts of the circuit for power transmission.
  • Drive Circuit: Implement suitable drive circuitry to control the switching behavior of the MOSFETs.

Frequently Asked Questions

Q: What is the maximum operating frequency of the IRF7204PBF?
A: The IRF7204PBF is designed for high-frequency operation, supporting frequencies up to 1MHz for efficient power conversion.

Q: Can the IRF7204PBF be used in motor drive applications?
A: Yes, the IRF7204PBF is suitable for motor control applications, providing fast and efficient power switching capabilities.

Equivalent

For similar functionalities, consider these alternatives to the IRF7204PBF:

  • IRF7304PBF: A comparable dual N-channel MOSFET module with slightly different electrical characteristics.
  • IRF7104PBF: This dual N-channel MOSFET module offers similar performance to the IRF7204PBF for power conversion applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 5.3 A Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Qg - Gate Charge 25 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 68 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 26 ns Factory Pack Quantity 3800
Subcategory MOSFETs Transistor Type 1 P-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 100 ns
Typical Turn-On Delay Time 14 ns Width 3.9 mm
Part # Aliases SP001574762 Unit Weight 0.019048 oz

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Warranty, Returns, and Additional Information

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IRF7204PBF

IRF7204PBF MOSFET: P Channel Device capable of Handling 20V and 5

Inventory:

7,098