IRF7201PBF
30V Drain-Source Voltage
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.184 | $0.18 |
200 | $0.071 | $14.20 |
500 | $0.069 | $34.50 |
1000 | $0.068 | $68.00 |
Inventory:7,773
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Part Number : IRF7201PBF
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Package/Case : SOIC-8
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Manufacturer : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRF7201PBF DataSheet (PDF)
The IRF7201PBF is an advanced power MOSFET featuring a low on-state resistance and high-speed switching capability. It is designed for use in power management and DC-DC converter applications, offering efficient and reliable performance. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) An illustrative circuit diagram showcasing the connections and operation of the IRF7201PBF MOSFET for visual reference. Note: For detailed technical specifications, please refer to the IRF7201PBF datasheet. Functionality The IRF7201PBF MOSFET is engineered to provide low on-state resistance and high-speed switching, making it essential for power management and DC-DC converter applications. Usage Guide Q: What is the maximum power handling capability of the IRF7201PBF? Q: Is the IRF7201PBF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IRF7201PBF:Overview of IRF7201PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF7201PBF is capable of handling high power levels, making it suitable for power management applications.
A: Yes, the high-speed switching capability of the IRF7201PBF makes it suitable for high-frequency applications such as DC-DC converters and voltage regulators.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 7 A | Rds On - Drain-Source Resistance | 50 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 19 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 19 ns | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 35 ns | Factory Pack Quantity | 3800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 7 ns | Width | 3.9 mm |
Part # Aliases | SP001559738 | Unit Weight | 0.019048 oz |
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