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IRF7201PBF

30V Drain-Source Voltage

Quantity Unit Price(USD) Ext. Price
1 $0.184 $0.18
200 $0.071 $14.20
500 $0.069 $34.50
1000 $0.068 $68.00

Inventory:7,773

*The price is for reference only.
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Overview of IRF7201PBF

The IRF7201PBF is an advanced power MOSFET featuring a low on-state resistance and high-speed switching capability. It is designed for use in power management and DC-DC converter applications, offering efficient and reliable performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

An illustrative circuit diagram showcasing the connections and operation of the IRF7201PBF MOSFET for visual reference.

Key Features

  • Low On-State Resistance: The IRF7201PBF MOSFET features a low RDS(ON) for efficient power management and minimal heat dissipation.
  • High-Speed Switching: This MOSFET offers fast switching characteristics, making it suitable for high-frequency applications.
  • Enhanced Power Management: Designed for use in DC-DC converter and power management applications, providing reliable power handling capability.
  • Robust Construction: Built to withstand high power levels and harsh operating conditions, ensuring long-term reliability.

Note: For detailed technical specifications, please refer to the IRF7201PBF datasheet.

Application

  • Power Management Systems: Ideal for use in power supply units and power management systems requiring efficient switching and low power dissipation.
  • DC-DC Converters: Suitable for incorporation into DC-DC converter circuits for voltage regulation and power conversion.
  • Motor Control: Can be utilized in motor control circuits for efficient switching and control of high-power loads.

Functionality

The IRF7201PBF MOSFET is engineered to provide low on-state resistance and high-speed switching, making it essential for power management and DC-DC converter applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the switching operation.
  • Drain and Source: Connect the load circuit between the drain (D) and source (S) pins of the MOSFET.

Frequently Asked Questions

Q: What is the maximum power handling capability of the IRF7201PBF?
A: The IRF7201PBF is capable of handling high power levels, making it suitable for power management applications.

Q: Is the IRF7201PBF suitable for high-frequency switching applications?
A: Yes, the high-speed switching capability of the IRF7201PBF makes it suitable for high-frequency applications such as DC-DC converters and voltage regulators.

Equivalent

For similar functionalities, consider these alternatives to the IRF7201PBF:

  • IRF7301PBF: A comparable MOSFET offering similar performance characteristics and power handling capabilities.
  • IRF7101PBF: This MOSFET provides similar power management and high-speed switching features, suitable for equivalent applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7 A Rds On - Drain-Source Resistance 50 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 19 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 19 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 35 ns Factory Pack Quantity 3800
Subcategory MOSFETs Transistor Type 1 N-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 7 ns Width 3.9 mm
Part # Aliases SP001559738 Unit Weight 0.019048 oz

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