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IRF7103PBF

MOSFET Dual N-Channel 50V 3A SOIC8

Inventory:9,400

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Overview of IRF7103PBF

The IRF7103PBF is a dual N-channel MOSFET power module designed for high voltage switching applications. This integrated module combines two N-channel MOSFETs in a single package, offering a compact and efficient solution for power control and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VIN: Input Voltage
  • GND: Ground
  • VOUT: Output Voltage
  • EN: Enable Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF7103PBF power module for a visual representation.

Key Features

  • Dual N-Channel MOSFETs: The IRF7103PBF features two N-channel MOSFETs in a single package for high voltage switching applications.
  • High Voltage Handling: Capable of handling high voltage levels, making it suitable for power control in various applications.
  • Compact Design: The integrated module offers a space-saving design for power applications with limited board space.
  • Low RDS(on): Low on-resistance ensures efficient power switching and minimal power dissipation.
  • Thermal Protection: Built-in thermal protection mechanisms guard against overheating during operation.

Note: For detailed technical specifications, please refer to the IRF7103PBF datasheet.

Application

  • Power Switching Systems: Ideal for high voltage power switching systems in industrial and automotive applications.
  • Motor Control: Suitable for motor control applications requiring efficient power amplification.
  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The IRF7103PBF dual N-channel MOSFET power module provides reliable and efficient power switching capabilities for a wide range of high voltage applications, ensuring optimal performance and control.

Usage Guide

  • Power Supply: Connect VIN to the input voltage source and GND to the ground.
  • Enable Control: Use the EN pin to enable or disable the power module as needed.
  • Output Connection: Connect VOUT to the output voltage line for power distribution.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IRF7103PBF?
A: The IRF7103PBF can handle maximum voltage levels of XXV, making it suitable for high voltage applications.

Q: Does the IRF7103PBF require external heat sinking?
A: The IRF7103PBF comes with built-in thermal protection mechanisms, but in high-power applications, external heat sinking may be recommended for optimal performance.

Equivalent

For similar functionalities, consider these alternatives to the IRF7103PBF:

  • IRF740N: A single N-channel MOSFET with comparable voltage and power handling capabilities.
  • IRFZ44N: This MOSFET offers similar performance characteristics to the IRF7103PBF in a different package style.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 3 A Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 12 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Dual
Fall Time 25 ns Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 3800
Subcategory MOSFETs Transistor Type 2 N-Channel
Type Power MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 9 ns Width 3.9 mm
Part # Aliases SP001563458 Unit Weight 0.019048 oz

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packageimg

IRF7103PBF

MOSFET Dual N-Channel 50V 3A SOIC8

Inventory:

9,400